Renesas Electronics - NESG2021M16-T3-A

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NESG2021M16-T3-A by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number NESG2021M16-T3-A
Description NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Power Dissipation (Abs): .175 W; Maximum Collector Current (IC): .035 A;
Datasheet NESG2021M16-T3-A Datasheet
NAME DESCRIPTION
Nominal Transition Frequency (fT): 25000 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .035 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE
Transistor Element Material: SILICON GERMANIUM
Transistor Application: AMPLIFIER
Sub-Category: BIP RF Small Signal
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 130
No. of Terminals: 6
Qualification: Not Qualified
Maximum Power Dissipation (Abs): .175 W
Maximum Collector-Emitter Voltage: 5 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F6
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Highest Frequency Band: C BAND
Maximum Collector-Base Capacitance: .2 pF
Peak Reflow Temperature (C): NOT SPECIFIED
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