Renesas Electronics - NESG2030M04-A

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6000 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .09 A;

The NXP Semiconductors BFR520T is a RF Small Signal BJT transistor with NPN polarity, suitable for amplifier applications. It operates in the L Band frequency range up to 9000 MHz, with a max power dissipation of 0.3W and a min DC current gain of 60.

NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 16 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): .15 A;

KSC1674R by Onsemi is an NPN BJT transistor for RF applications. It features a low VCEsat of 0.3V, hFE of 40, and fT of 600MHz. Ideal for amplifiers in the ultra-high frequency band with a max operating temp of 150 °C.

RF Small Signal Bipolar Transistors; Terminal Finish: TIN BISMUTH; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 260; JESD-609 Code: e6; Maximum Time At Peak Reflow Temperature (s): 30;

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 800 MHz; Maximum Collector Current (IC): .3 A; JESD-609 Code: e3;

STMicroelectronics' MSC80196 is an NPN BJT transistor with a min hFE of 15, ideal for amplifier applications in the L Band. With a max fT of 3200 MHz and IC of 0.5 A, it operates at temperatures up to 200 °C. This surface-mount transistor has a metal-sealed co-fired ceramic package body and flat terminals.

NE85633-T1B-A by Renesas Electronics is a NPN BJT transistor for RF applications. It operates in the ultra high frequency band with a transition frequency of 7000 MHz. This single configuration transistor has a max collector-emitter voltage of 12V and is suitable for amplifier circuits in small outline packages.

The NXP Semiconductors BFU520XRVL is a RF Small Signal BJT transistor with NPN polarity. It is designed for amplifier applications in the L Band frequency range, with a max operating temperature of 150°C and a min DC current gain of 60 (hFE). This surface mount transistor has a rectangular package shape and four terminals.

RF Small Signal Bipolar Transistors; Terminal Finish: Tin/Bismuth (Sn/Bi); Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e6;

NXP Semiconductors' BFR93AT/R is a NPN RF BJT transistor with 3 terminals, ideal for L Band applications. It has a max power dissipation of 0.35W, fT of 6000MHz, and hFE of 40. This small outline package transistor operates at up to 150°C and can handle a max collector-emitter voltage of 12V.

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .035 A;

RF Small Signal Bipolar Transistors; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Finish: TIN; Peak Reflow Temperature (C): 260;

CPH6003A-TL-E by Onsemi is an NPN RF BJT with a max power dissipation of 0.8W and min hFE of 100. Ideal for applications requiring a single configuration, surface mount capability, and operating temperatures up to 150°C.

The Onsemi BF224RLRE is an NPN RF BJT with a max. collector-emitter voltage of 30V and max. collector current of 0.05A. Operating up to 150 °C, it has a transition frequency of 850MHz, making it ideal for high-frequency applications in very high frequency bands. The transistor's through-hole package with cylindrical shape and bottom terminal position ensures easy installation and reliable performance.

Onsemi's 2SC5226A-4-TL-E is an NPN RF BJT with a max fT of 7000 MHz. It has a max Vce of 10V and Ic of 0.07A, suitable for ultra-high frequency applications. This transistor comes in a small outline package ideal for surface mount designs.

Microsemi 3001 is an NPN BJT transistor for amplifier applications. Features include S band frequency, max operating temp of 200°C, and 0.2A collector current. Its ceramic-metal package with flange mount shape makes it suitable for RF signal amplification in various electronic devices.

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6000 MHz; Maximum Collector Current (IC): .05 A; Transistor Element Material: SILICON;

MPS918RL by Onsemi is an NPN RF BJT transistor with a max collector-emitter voltage of 15V and a nominal transition frequency of 600MHz. It is designed for amplifier applications in the ultra-high-frequency band, featuring a max operating temperature of 150 °C. This through-hole transistor has a package style of cylindrical shape with three terminals.

RF Small Signal Bipolar Transistors; Terminal Finish: TIN BISMUTH; JESD-609 Code: e6; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1; Maximum Time At Peak Reflow Temperature (s): 30;