Renesas Electronics - NESG2101M05

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NESG2101M05 by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number NESG2101M05
Description NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 130; Transistor Element Material: SILICON GERMANIUM;
Datasheet NESG2101M05 Datasheet
NAME DESCRIPTION
Maximum Collector Current (IC): .1 A
Maximum Power Dissipation (Abs): .5 W
Transistor Element Material: SILICON GERMANIUM
No. of Elements: 1
Sub-Category: BIP RF Small Signal
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 130
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