Renesas Electronics - NESG2101M16

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NESG2101M16 by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number NESG2101M16
Description NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 17000 MHz; Maximum Power Dissipation (Abs): .19 W; Maximum Collector Current (IC): .1 A;
Datasheet NESG2101M16 Datasheet
NAME DESCRIPTION
Nominal Transition Frequency (fT): 17000 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .1 A
Configuration: SINGLE
Transistor Element Material: SILICON GERMANIUM
Transistor Application: AMPLIFIER
Sub-Category: BIP RF Small Signal
Surface Mount: YES
Terminal Finish: TIN LEAD
No. of Terminals: 6
Maximum Power Dissipation (Abs): .19 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F6
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Highest Frequency Band: L BAND
Maximum Operating Temperature: 150 Cel
Polarity or Channel Type: NPN
Minimum DC Current Gain (hFE): 130
JESD-609 Code: e0
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 5 V
Additional Features: LOW NOISE
Maximum Collector-Base Capacitance: .5 pF
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