Renesas Electronics - NESG2107M33

  1. Home
  2. Renesas Electronics - NESG2107M33
NESG2107M33 by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number NESG2107M33
Description NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .13 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON GERMANIUM; No. of Elements: 1;
Datasheet NESG2107M33 Datasheet
NAME DESCRIPTION
Maximum Collector Current (IC): .1 A
Maximum Power Dissipation (Abs): .13 W
Transistor Element Material: SILICON GERMANIUM
No. of Elements: 1
Sub-Category: BIP RF Small Signal
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 140
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

LPT16ED by Sige Semiconductor

LPT16ED

Sige Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .08 A; Transistor Application: AMPLIFIER;
2SC5231A-9-TL-E by Onsemi

2SC5231A-9-TL-E

Onsemi

RF Small Signal Bipolar Transistors; Terminal Finish: Tin/Bismuth (Sn/Bi); JESD-609 Code: e6; Moisture Sensitivity Level (MSL): 1;
BFU520XRVL by NXP Semiconductors

BFU520XRVL

NXP Semiconductors

The NXP Semiconductors BFU520XRVL is a RF Small Signal BJT transistor with NPN polarity. It is designed for amplifier applications in the L Band frequency range, with a max operating temperature of 150°C and a min DC current gain of 60 (hFE). This surface mount transistor has a rectangular package shape and four terminals.
MPS3640 by NXP Semiconductors

MPS3640

NXP Semiconductors

NXP Semiconductors' MPS3640 is a PNP BJT transistor with 3 terminals, ideal for switching applications in the UHF band. Featuring a max. collector-emitter voltage of 12V, fT of 500MHz, and IC of 0.08A, it offers high performance in a cylindrical package suitable for through-hole mounting.
BFP193WH6327XTSA1 by Infineon Technologies

BFP193WH6327XTSA1

Infineon Technologies

BFP193WH6327XTSA1 by Infineon is a NPN RF BJT with 12V VCEO, 8000MHz fT, and 0.08A IC. It's used as an amplifier in L Band applications. The transistor has a small outline package with gull wing terminals for surface mount assembly.
BF224ZL1 by Onsemi

BF224ZL1

Onsemi

BF224ZL1 by Onsemi is a NPN BJT with max. 30V VCE, 0.05A IC, and 850MHz fT. Ideal for RF applications in the very high frequency band due to its SILICON transistor element and cylindrical package style. Operates at up to 150 °C with through-hole terminals for easy installation.
BFP620FE7764 by Infineon Technologies

BFP620FE7764

Infineon Technologies

BFP620FE7764 by Infineon Technologies is a NPN RF BJT transistor with 4 terminals, operating in the C band up to 65 GHz. It has a max collector-emitter voltage of 2.3V and collector current of 0.08A, making it suitable for high-frequency applications like wireless communication systems. The package is surface mountable with a small outline shape and matte tin finish.
BFR92PE6327 by Siemens

BFR92PE6327

Siemens

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Collector Current (IC): .03 A; Terminal Position: DUAL;
FFB3946 by Onsemi

FFB3946

Onsemi

The Onsemi FFB3946 is a RF BJT transistor with NPN and PNP channels, ideal for switching applications. It has 2 elements in a small outline package, with max voltage of 40V and max current of 0.2A. Operating up to 150 °C, it offers a transition frequency of 200MHz for efficient performance.
BFP196E6327HTSA1 by Infineon Technologies

BFP196E6327HTSA1

Infineon Technologies

BFP196E6327HTSA1 by Infineon Technologies is a NPN RF BJT transistor with 4 terminals, operating up to 150°C. It has a max fT of 7500 MHz and collector-emitter voltage of 12V, making it ideal for L Band amplifier applications. The package is surface mountable with Gull Wing terminals in a small outline rectangular shape.
BFP650FH6327XTSA1 by Infineon Technologies

BFP650FH6327XTSA1

Infineon Technologies

RF Small Signal Bipolar Transistors; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1; Terminal Finish: TIN;
BFR92A by Vishay Telefunken

BFR92A

Vishay Telefunken

RF Small Signal Bipolar Transistors; Surface Mount: YES; Qualification: Not Qualified; Package Style (Meter): SMALL OUTLINE; Package Body Material: PLASTIC/EPOXY; No. of Terminals: 3;
934067697215 by NXP Semiconductors

934067697215

NXP Semiconductors

RF Small Signal Bipolar Transistors; Terminal Finish: TIN; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 30;
BF959RL1 by Onsemi

BF959RL1

Onsemi

BF959RL1 by Onsemi is a NPN BJT transistor with 3 terminals, max. power dissipation of 1.5W, and fT of 700MHz. Ideal for amplifier applications in the VHF band due to its high collector-emitter voltage of 20V and max. operating temp. of 150°C.
BFU550XRVL by NXP Semiconductors

BFU550XRVL

NXP Semiconductors

The NXP Semiconductors BFU550XRVL is a RF BJT transistor with NPN polarity, suitable for amplifier applications. It has a max operating temperature of 150°C and can handle a collector-emitter voltage of 12V. With a transition frequency of 11GHz, it is ideal for L Band frequencies in small outline packages.
LM3046MX by Texas Instruments

LM3046MX

Texas Instruments

LM3046MX by Texas Instruments is an NPN BJT with 5 elements, suitable for amplifier applications in the VHF band. It has a max fT of 550 MHz, hFE of 40, and can handle up to 0.05 A collector current. The package is a small outline with Gull Wing terminals and can dissipate 0.75 W at 85°C.
MPSH10RLRPG by Onsemi

MPSH10RLRPG

Onsemi

MPSH10RLRPG by Onsemi is an NPN RF BJT transistor with a max operating temperature of 150°C. It has a min DC current gain of 60 and a nominal transition frequency of 650 MHz, making it suitable for amplifier applications in the ultra-high-frequency band. With a max collector-emitter voltage of 25V and a power dissipation of 0.35W, this transistor is ideal for high-frequency circuit designs.
CA3086M by Harris Semiconductor

CA3086M

Harris Semiconductor

NPN; Configuration: COMPLEX; Surface Mount: YES; Nominal Transition Frequency (fT): 550 MHz; Maximum Collector Current (IC): .05 A; Maximum Collector-Emitter Voltage: 15 V;
934063143215 by NXP Semiconductors

934063143215

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 9000 MHz; Maximum Collector Current (IC): .018 A; Package Style (Meter): SMALL OUTLINE;
BFS17NTA by Diodes Incorporated

BFS17NTA

Diodes Incorporated

Diodes Incorporated's BFS17NTA is an NPN BJT transistor with 3 terminals, ideal for switching applications. With a max power dissipation of 0.33W and max operating temp of 150°C, it offers a transition frequency of 3200MHz. Its small outline package makes it suitable for surface mount designs in RF circuits.