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| Manufacturer | Renesas Electronics |
|---|---|
| Manufacturer's Part Number | NESG220034-A |
| Description | NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 11500 MHz; Maximum Power Dissipation (Abs): .886 W; Maximum Collector Current (IC): .2 A; |
| Datasheet | NESG220034-A Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Nominal Transition Frequency (fT): | 11500 MHz |
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Collector Current (IC): | .2 A |
| Configuration: | SINGLE |
| Transistor Element Material: | SILICON GERMANIUM |
| Transistor Application: | AMPLIFIER |
| Sub-Category: | BIP RF Small Signal |
| Surface Mount: | YES |
| Terminal Finish: | TIN BISMUTH |
| No. of Terminals: | 3 |
| Maximum Power Dissipation (Abs): | .886 W |
| Terminal Position: | SINGLE |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PSSO-F3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | FLAT |
| Highest Frequency Band: | ULTRA HIGH FREQUENCY BAND |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | COLLECTOR |
| Polarity or Channel Type: | NPN |
| Minimum DC Current Gain (hFE): | 140 |
| JESD-609 Code: | e6 |
| Qualification: | Not Qualified |
| Maximum Collector-Emitter Voltage: | 5.5 V |
| Maximum Collector-Base Capacitance: | 1.1 pF |
