Renesas Electronics - NESG3031M14-T3

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NESG3031M14-T3 by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number NESG3031M14-T3
Description NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .035 A; Transistor Element Material: SILICON GERMANIUM; Minimum DC Current Gain (hFE): 220;
Datasheet NESG3031M14-T3 Datasheet
NAME DESCRIPTION
Maximum Collector Current (IC): .035 A
Maximum Power Dissipation (Abs): .15 W
Transistor Element Material: SILICON GERMANIUM
No. of Elements: 1
Sub-Category: BIP RF Small Signal
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 220
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