NEZ1011-8E by Renesas Electronics | Transistors

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Manufacturer	Renesas Electronics
Manufacturer's Part Number	NEZ1011-8E
Description	N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Drain Current (ID): 9 A; Minimum DS Breakdown Voltage: 9 V; Maximum Operating Temperature: 175 Cel;
Datasheet	NEZ1011-8E Datasheet

NAME	DESCRIPTION
Package Body Material:	CERAMIC, METAL-SEALED COFIRED
Configuration:	SINGLE
Transistor Element Material:	GALLIUM ARSENIDE
Field Effect Transistor Technology:	METAL SEMICONDUCTOR
Transistor Application:	AMPLIFIER
Maximum Drain Current (ID):	9 A
Sub-Category:	Other Transistors
Surface Mount:	YES
No. of Terminals:	2
Terminal Position:	DUAL
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-CDFM-F2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Operating Mode:	DEPLETION MODE
Highest Frequency Band:	KU BAND
Maximum Operating Temperature:	175 Cel
Case Connection:	SOURCE
Maximum Power Dissipation Ambient:	15 W
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	9 V
Qualification:	Not Qualified
Additional Features:	HIGH RELIABILITY
Maximum Drain Current (Abs) (ID):	9 A

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