Renesas Electronics - NP30N06QDK-E1-AY

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NP30N06QDK-E1-AY by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number NP30N06QDK-E1-AY
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 59 W; Transistor Element Material: SILICON; Package Body Material: PLASTIC/EPOXY;
Datasheet NP30N06QDK-E1-AY Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 43 ns
Maximum Drain Current (ID): 30 A
Maximum Pulsed Drain Current (IDM): 120 A
Surface Mount: YES
No. of Terminals: 8
Maximum Power Dissipation (Abs): 59 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
Maximum Turn Off Time (toff): 108 ns
JESD-30 Code: R-PDSO-F8
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .014 ohm
Maximum Feedback Capacitance (Crss): 90 pF
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 60 V
Reference Standard: AEC-Q101
Peak Reflow Temperature (C): NOT SPECIFIED
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