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| Manufacturer | Renesas Electronics |
|---|---|
| Manufacturer's Part Number | NP30N06QDK-E2-AY |
| Description | N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 59 W; Package Body Material: PLASTIC/EPOXY; Maximum Turn Off Time (toff): 108 ns; |
| Datasheet | NP30N06QDK-E2-AY Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Turn On Time (ton): | 43 ns |
| Maximum Drain Current (ID): | 30 A |
| Maximum Pulsed Drain Current (IDM): | 120 A |
| Surface Mount: | YES |
| No. of Terminals: | 8 |
| Maximum Power Dissipation (Abs): | 59 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| Maximum Turn Off Time (toff): | 108 ns |
| JESD-30 Code: | R-PDSO-F8 |
| No. of Elements: | 2 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | FLAT |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 175 Cel |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .014 ohm |
| Maximum Feedback Capacitance (Crss): | 90 pF |
| Polarity or Channel Type: | N-CHANNEL |
| Minimum DS Breakdown Voltage: | 60 V |
| Reference Standard: | AEC-Q101 |
