NP30N06QDK-E2-AY by Renesas Electronics | Transistors

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Manufacturer	Renesas Electronics
Manufacturer's Part Number	NP30N06QDK-E2-AY
Description	N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 59 W; Package Body Material: PLASTIC/EPOXY; Maximum Turn Off Time (toff): 108 ns;
Datasheet	NP30N06QDK-E2-AY Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Turn On Time (ton):	43 ns
Maximum Drain Current (ID):	30 A
Maximum Pulsed Drain Current (IDM):	120 A
Surface Mount:	YES
No. of Terminals:	8
Maximum Power Dissipation (Abs):	59 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
Maximum Turn Off Time (toff):	108 ns
JESD-30 Code:	R-PDSO-F8
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.014 ohm
Maximum Feedback Capacitance (Crss):	90 pF
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	60 V
Reference Standard:	AEC-Q101

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