Renesas Electronics - NP36P04KDG

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NP36P04KDG by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number NP36P04KDG
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; JEDEC-95 Code: TO-263AB; Package Shape: RECTANGULAR;
Datasheet NP36P04KDG Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 36 A
Maximum Pulsed Drain Current (IDM): 108 A
Surface Mount: YES
Terminal Finish: TIN LEAD
No. of Terminals: 2
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0235 ohm
Avalanche Energy Rating (EAS): 72 mJ
JEDEC-95 Code: TO-263AB
Polarity or Channel Type: P-CHANNEL
JESD-609 Code: e0
Minimum DS Breakdown Voltage: 40 V
Qualification: Not Qualified
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