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| Manufacturer | Renesas Electronics |
|---|---|
| Manufacturer's Part Number | NP36P04SDG-E1-AY |
| Description | P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 56 W; Package Body Material: PLASTIC/EPOXY; Reference Standard: AEC-Q101; |
| Datasheet | NP36P04SDG-E1-AY Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 36 A |
| Maximum Pulsed Drain Current (IDM): | 108 A |
| Sub-Category: | Other Transistors |
| Surface Mount: | YES |
| No. of Terminals: | 2 |
| Maximum Power Dissipation (Abs): | 56 W |
| Terminal Position: | SINGLE |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PSSO-G2 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 175 Cel |
| Case Connection: | DRAIN |
| Maximum Power Dissipation Ambient: | 1.2 W |
| Maximum Drain-Source On Resistance: | .0235 ohm |
| Avalanche Energy Rating (EAS): | 67 mJ |
| Maximum Feedback Capacitance (Crss): | 280 pF |
| JEDEC-95 Code: | TO-252 |
| Polarity or Channel Type: | P-CHANNEL |
| Minimum DS Breakdown Voltage: | 40 V |
| Qualification: | Not Qualified |
| Reference Standard: | AEC-Q101 |
| Maximum Drain Current (Abs) (ID): | 36 A |
| Peak Reflow Temperature (C): | NOT SPECIFIED |
