NP36P06KDG-E1-AY by Renesas Electronics | Transistors

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Manufacturer	Renesas Electronics
Manufacturer's Part Number	NP36P06KDG-E1-AY
Description	P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 56 W; Case Connection: DRAIN; Terminal Form: GULL WING;
Datasheet	NP36P06KDG-E1-AY Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	36 A
Maximum Pulsed Drain Current (IDM):	108 A
Sub-Category:	Other Transistors
Surface Mount:	YES
No. of Terminals:	2
Maximum Power Dissipation (Abs):	56 W
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.0375 ohm
Avalanche Energy Rating (EAS):	54 mJ
JEDEC-95 Code:	TO-263AB
Polarity or Channel Type:	P-CHANNEL
Minimum DS Breakdown Voltage:	60 V
Qualification:	Not Qualified
Maximum Drain Current (Abs) (ID):	36 A
Peak Reflow Temperature (C):	NOT SPECIFIED

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