NP84N04MHE by Renesas Electronics | Transistors

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Manufacturer	Renesas Electronics
Manufacturer's Part Number	NP84N04MHE
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain-Source On Resistance: .0052 ohm; JESD-30 Code: R-PSFM-T3; No. of Terminals: 3;
Datasheet	NP84N04MHE Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	84 A
Maximum Pulsed Drain Current (IDM):	336 A
Surface Mount:	NO
Terminal Finish:	TIN LEAD
No. of Terminals:	3
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.0052 ohm
Avalanche Energy Rating (EAS):	372 mJ
JEDEC-95 Code:	TO-220AB
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e0
Minimum DS Breakdown Voltage:	40 V
Qualification:	Not Qualified

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