Renesas Electronics - NX6504GI-A

  1. Home
  2. Renesas Electronics - NX6504GI-A
NX6504GI-A by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number NX6504GI-A
Description LASER DIODE; Terminal Finish: Tin/Bismuth (Sn/Bi); Nominal Output Power: 10 W; No. of Functions: 1; Configuration: SINGLE WITH BUILT-IN PHOTO DIODE; Maximum Threshold Current: 25 mA;
Datasheet NX6504GI-A Datasheet
NAME DESCRIPTION
No. of Functions: 1
Optoelectronic Type: LASER DIODE
Shape: ROUND
Configuration: SINGLE WITH BUILT-IN PHOTO DIODE
Nominal Output Power: 10 W
Peak Wavelength (nm): 1550
Maximum Threshold Current: 25 mA
Terminal Finish: Tin/Bismuth (Sn/Bi)
JESD-609 Code: e6
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

TOED313 by Toshiba

TOED313

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .0000000035 s; Maximum Operating Temperature: 60 Cel; Peak Wavelength (nm): 1310; Maximum Forward Voltage: 1.5 V;
TOLD322ABA by Toshiba

TOLD322ABA

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .000000001 s; Maximum Forward Current: .15 A; Minimum Operating Temperature: -10 Cel; Maximum Forward Voltage: 1.5 V;
TOLD155 by Toshiba

TOLD155

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Maximum Forward Current: .11 A; Peak Wavelength (nm): 810; Maximum Operating Temperature: 50 Cel;
SFH4232 by Infineon Technologies

SFH4232

Infineon Technologies

LASER DIODE; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Spectral Bandwidth: 1 m; Peak Wavelength (nm): 920; Minimum Operating Temperature: -40 Cel;
TOLD121 by Toshiba

TOLD121

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .085 A; Minimum Operating Temperature: -10 Cel; Peak Wavelength (nm): 780; Maximum Operating Temperature: 50 Cel;
NX8571SC650-BA by Renesas Electronics

NX8571SC650-BA

Renesas Electronics

LASER DIODE; Maximum Operating Temperature: 70 Cel; Maximum Forward Current: .3 A; Peak Wavelength (nm): 1565; Minimum Operating Temperature: -5 Cel; Maximum Forward Voltage: 2.5 V;
TOLD310 by Toshiba

TOLD310

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 1310; Maximum Response Time: .0000000003 s; Minimum Operating Temperature: -10 Cel; Maximum Forward Voltage: 1.5 V;
NX8564LE853-CC by Renesas Electronics

NX8564LE853-CC

Renesas Electronics

LASER DIODE; Peak Wavelength (nm): 1585; Maximum Forward Voltage: 2 V; Maximum Operating Temperature: 70 Cel; Maximum Response Time: .000000000125 s; Maximum Forward Current: .15 A;
TOLD321CAA by Toshiba

TOLD321CAA

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .000000001 s; Minimum Operating Temperature: 0 Cel; Peak Wavelength (nm): 1310; Maximum Forward Current: .15 A;
NX8570SC6070D-BA by Renesas Electronics

NX8570SC6070D-BA

Renesas Electronics

LASER DIODE; Maximum Forward Voltage: 2.5 V; Peak Wavelength (nm): 1607; Semiconductor Material: InGaAsP; Maximum Operating Temperature: 70 Cel; Maximum Forward Current: .3 A;
TOLD110 by Toshiba

TOLD110

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Semiconductor Material: GaAlAs; Maximum Operating Temperature: 60 Cel; JESD-609 Code: e0;
SDL4034-101 by Onsemi

SDL4034-101

Onsemi

SDL4034-101 by Onsemi is an 800nm LASER DIODE with GaAlAs semiconductor material. It operates b/w -10 °C to 50°C, featuring THROUGH HOLE MOUNT. Ideal for applications requiring precise optical emission in a wide temperature range.
SDL3034 by Onsemi

SDL3034

Onsemi

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Semiconductor Material: GaAlAs; Peak Wavelength (nm): 780; JESD-609 Code: e0;
DL-4148-031 by Onsemi

DL-4148-031

Onsemi

DL-4148-031 by Onsemi is a LASER DIODE with peak wavelength of 635nm, max forward current of 0.08A, and max forward voltage of 2.5V. It operates b/w -10 °C to 50°C, suitable for THROUGH HOLE MOUNT applications in various industries.
DL-LS40 by Onsemi

DL-LS40

Onsemi

DL-LS40 by Onsemi is an 800nm LASER DIODE with AlGaInP material. It operates b/w -10 °C to 50°C, suitable for THROUGH HOLE MOUNT applications in optoelectronics.
SDL7033-101 by Onsemi

SDL7033-101

Onsemi

SDL7033-101 by Onsemi is an 875nm LASER DIODE with GaAlAs material. It operates b/w -10 °C to 50°C, suitable for THROUGH HOLE MOUNT applications in optoelectronics.
NX8570SC437-BA-AZ by Renesas Electronics

NX8570SC437-BA-AZ

Renesas Electronics

LASER DIODE; Semiconductor Material: InGaAsP; Peak Wavelength (nm): 1543; Minimum Operating Temperature: -5 Cel; Maximum Forward Voltage: 2.5 V; Maximum Forward Current: .3 A;
NX8565LE6031-CC by Renesas Electronics

NX8565LE6031-CC

Renesas Electronics

LASER DIODE; Mounting Feature: SURFACE MOUNT; Semiconductor Material: GaAs; Peak Wavelength (nm): 1600; Maximum Operating Temperature: 70 Cel; Maximum Forward Voltage: 2 V;
SDL7033-111 by Onsemi

SDL7033-111

Onsemi

SDL7033-111 by Onsemi is an 890nm LASER DIODE with GaAlAs semiconductor material. It operates b/w -10 °C to 50°C, suitable for THROUGH HOLE MOUNT applications in optoelectronics.
NX8563LB311 by Renesas Electronics

NX8563LB311

Renesas Electronics

LASER DIODE; Maximum Forward Voltage: 1.5 V; Semiconductor Material: InGaAsP; Minimum Operating Temperature: -20 Cel; Peak Wavelength (nm): 1531; Maximum Operating Temperature: 65 Cel;