Renesas Electronics - NX8330RA-BA

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NX8330RA-BA by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number NX8330RA-BA
Description LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 1310; Semiconductor Material: AlGaInP; Maximum Operating Temperature: 70 Cel; Maximum Forward Voltage: 1.4 V;
Datasheet NX8330RA-BA Datasheet
NAME DESCRIPTION
Optoelectronic Type: LASER DIODE
Maximum Forward Current: .15 A
Peak Wavelength (nm): 1310
Maximum Operating Temperature: 70 Cel
Semiconductor Material: AlGaInP
Sub-Category: Laser Diodes
Maximum Forward Voltage: 1.4 V
Minimum Operating Temperature: 0 Cel
Mounting Feature: THROUGH HOLE MOUNT
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