Renesas Electronics - NX8565LE6083-BC

  1. Home
  2. Renesas Electronics - NX8565LE6083-BC
NX8565LE6083-BC by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number NX8565LE6083-BC
Description Laser Diodes;
Datasheet NX8565LE6083-BC Datasheet
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

SDL3140-101 by Onsemi

SDL3140-101

Onsemi

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 65 Cel; Peak Wavelength (nm): 790; Minimum Operating Temperature: -10 Cel;
NX8501BG-BA by Renesas Electronics

NX8501BG-BA

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .2 A; Minimum Operating Temperature: 0 Cel; Semiconductor Material: InGaAsP; Maximum Forward Voltage: 2 V;
NX8570SC6061-BA-A by Renesas Electronics

NX8570SC6061-BA-A

Renesas Electronics

LASER DIODE; Minimum Operating Temperature: -5 Cel; Maximum Forward Current: .3 A; Maximum Forward Voltage: 2.5 V; Peak Wavelength (nm): 1606; Maximum Operating Temperature: 70 Cel;
NX8567SAM569-CC by Renesas Electronics

NX8567SAM569-CC

Renesas Electronics

LASER DIODE; Peak Wavelength (nm): 1556; Minimum Operating Temperature: -5 Cel; Maximum Operating Temperature: 70 Cel; Maximum Response Time: .000000000125 s; Maximum Forward Current: .15 A;
GH0401FA2K by Sharp Corporation

GH0401FA2K

Sharp Corporation

GH0401FA2K by Sharp Corp is a 405nm LASER DIODE with max output power of 150W and peak current of 0.13A. Ideal for RADIAL MOUNT applications, operating b/w -10 to 75°C, it offers high efficiency in various optoelectronic setups.
NX8565LE870-CC by Renesas Electronics

NX8565LE870-CC

Renesas Electronics

LASER DIODE; Mounting Feature: SURFACE MOUNT; Maximum Operating Temperature: 70 Cel; Peak Wavelength (nm): 1587; Minimum Operating Temperature: -20 Cel; Maximum Forward Current: .1 A;
DL-3148-021 by Onsemi

DL-3148-021

Onsemi

DL-3148-021 by Onsemi is a 640nm LASER DIODE with AlGaInP material. It operates b/w -10 °C to 40°C, featuring THROUGH HOLE MOUNT. Ideal for applications requiring precise laser emission in optoelectronics and telecommunications.
TOLD323ABC by Toshiba

TOLD323ABC

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .000000001 s; Minimum Operating Temperature: -10 Cel; Peak Wavelength (nm): 1310; Maximum Operating Temperature: 70 Cel;
TOLD322BCB by Toshiba

TOLD322BCB

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -30 Cel; Maximum Response Time: .000000001 s; Maximum Forward Voltage: 1.5 V; Peak Wavelength (nm): 1310;
TOLD321BAC by Toshiba

TOLD321BAC

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .15 A; Semiconductor Material: InGaAs; Maximum Forward Voltage: 2 V; Maximum Response Time: .000000001 s;
NX8565LE737-CC by Renesas Electronics

NX8565LE737-CC

Renesas Electronics

LASER DIODE; Mounting Feature: SURFACE MOUNT; Peak Wavelength (nm): 1574; Maximum Forward Current: .1 A; Maximum Forward Voltage: 2 V; Maximum Response Time: .000000000125 s;
TOLD133 by Toshiba

TOLD133

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .115 A; Peak Wavelength (nm): 830; Minimum Operating Temperature: -10 Cel; Maximum Operating Temperature: 50 Cel;
SPLCG81 by Infineon Technologies

SPLCG81

Infineon Technologies

LASER DIODE; Mounting Feature: SURFACE MOUNT; Nominal Output Power: 2000 W; No. of Functions: 1; Maximum Operating Temperature: 60 Cel; Size: 4.5 mm;
TOLD124R by Toshiba

TOLD124R

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 780; Maximum Forward Current: .08 A; Maximum Operating Temperature: 50 Cel; Minimum Operating Temperature: -10 Cel;
TOLD100 by Toshiba

TOLD100

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Peak Wavelength (nm): 780; JESD-609 Code: e0; Semiconductor Material: GaAlAs;
NX8570SA565-BA by Renesas Electronics

NX8570SA565-BA

Renesas Electronics

LASER DIODE; Minimum Operating Temperature: -5 Cel; Maximum Operating Temperature: 70 Cel; Semiconductor Material: InGaAsP; Maximum Forward Voltage: 2.5 V; Peak Wavelength (nm): 1557;
NX8570SC346-BA-A by Renesas Electronics

NX8570SC346-BA-A

Renesas Electronics

LASER DIODE; Maximum Forward Voltage: 2.5 V; Minimum Operating Temperature: -5 Cel; Maximum Forward Current: .3 A; Semiconductor Material: InGaAsP; Maximum Operating Temperature: 70 Cel;
NX8564LE954-BC by Renesas Electronics

NX8564LE954-BC

Renesas Electronics

Laser Diodes;
NX8565LE921-CC by Renesas Electronics

NX8565LE921-CC

Renesas Electronics

LASER DIODE; Mounting Feature: SURFACE MOUNT; Minimum Operating Temperature: -20 Cel; Maximum Response Time: .000000000125 s; Maximum Operating Temperature: 70 Cel; Peak Wavelength (nm): 1592;
NX8570SC457D-BA by Renesas Electronics

NX8570SC457D-BA

Renesas Electronics

LASER DIODE; Minimum Operating Temperature: -5 Cel; Maximum Operating Temperature: 70 Cel; Semiconductor Material: InGaAsP; Peak Wavelength (nm): 1546; Maximum Forward Voltage: 2.5 V;