Renesas Electronics - NX8566LE753-CC

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NX8566LE753-CC by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number NX8566LE753-CC
Description Laser Diodes;
Datasheet NX8566LE753-CC Datasheet
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NDL7130D by Renesas Electronics

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LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Voltage: 2.5 V; Maximum Operating Temperature: 55 Cel; Peak Wavelength (nm): 1480; Minimum Operating Temperature: -20 Cel;
DL-3147-241 by Onsemi

DL-3147-241

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DL-3147-241 by Onsemi is a 655nm LASER DIODE with AlGaInP material. It operates b/w -10 °C to 60°C, suitable for THROUGH HOLE MOUNT applications like laser pointers and medical devices.
CQF25B/D24 by NXP Semiconductors

CQF25B/D24

NXP Semiconductors

CQF25B/D24 by NXP Semiconductors is a high-performance laser diode with a peak wavelength of 850 nm and a max forward current of 0.15 A. It operates efficiently b/w -10 °C to 60 °C, making it ideal for various optoelectronic applications. With an ultra-fast response time of 0.5 ns, it's perfect for data communication systems.
SDL5033-201 by Onsemi

SDL5033-201

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SDL5033-201 by Onsemi is an 875nm LASER DIODE with GaAlAs material. It operates b/w -10 °C to 50°C, suitable for THROUGH HOLE MOUNT applications in optoelectronics.
NX8560SJ565-CC by Renesas Electronics

NX8560SJ565-CC

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LASER DIODE; Maximum Response Time: .00000000004 s; Maximum Operating Temperature: 70 Cel; Maximum Forward Voltage: 2 V; Semiconductor Material: GaAs; Maximum Forward Current: .15 A;
NX8560SJ569-CC by Renesas Electronics

NX8560SJ569-CC

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LASER DIODE; Peak Wavelength (nm): 1557; Minimum Operating Temperature: -5 Cel; Maximum Response Time: .00000000004 s; Maximum Forward Voltage: 2 V; Semiconductor Material: GaAs;
TOLD323ABA by Toshiba

TOLD323ABA

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .15 A; Maximum Forward Voltage: 2 V; Maximum Response Time: .000000001 s; Semiconductor Material: InGaAs;
DL-LS40 by Onsemi

DL-LS40

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DL-LS40 by Onsemi is an 800nm LASER DIODE with AlGaInP material. It operates b/w -10 °C to 50°C, suitable for THROUGH HOLE MOUNT applications in optoelectronics.
NX8571SC497-BA by Renesas Electronics

NX8571SC497-BA

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LASER DIODE; Maximum Forward Voltage: 2.5 V; Maximum Forward Current: .3 A; Peak Wavelength (nm): 1549; Semiconductor Material: InGaAsP; Maximum Operating Temperature: 70 Cel;
NX8570SC346-BA-A by Renesas Electronics

NX8570SC346-BA-A

Renesas Electronics

LASER DIODE; Maximum Forward Voltage: 2.5 V; Minimum Operating Temperature: -5 Cel; Maximum Forward Current: .3 A; Semiconductor Material: InGaAsP; Maximum Operating Temperature: 70 Cel;
Q65113A2191 by Osram Opto Semiconductors

Q65113A2191

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Osram Opto Semiconductors' Q65113A2191 is a 940nm LASER DIODE with 6500W output power and 900mA threshold current. Ideal for applications requiring surface mount configuration, it operates b/w -20°C to 85°C temperatures.
SFH480402 by Infineon Technologies

SFH480402

Infineon Technologies

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 809; Shape: RECTANGULAR; Configuration: SINGLE; Spectral Bandwidth: 200000 m;
STM81004Z by Infineon Technologies

STM81004Z

Infineon Technologies

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .12 A; Minimum Operating Temperature: -40 Cel; Peak Wavelength (nm): 1590; Maximum Operating Temperature: 85 Cel;
TOLD321CAA by Toshiba

TOLD321CAA

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .000000001 s; Minimum Operating Temperature: 0 Cel; Peak Wavelength (nm): 1310; Maximum Forward Current: .15 A;
SDL3034-101 by Onsemi

SDL3034-101

Onsemi

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 65 Cel; Minimum Operating Temperature: -10 Cel; Peak Wavelength (nm): 780;
NX8570SC6087D-BA by Renesas Electronics

NX8570SC6087D-BA

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LASER DIODE; Maximum Forward Voltage: 2.5 V; Minimum Operating Temperature: -5 Cel; Semiconductor Material: InGaAsP; Maximum Forward Current: .3 A; Peak Wavelength (nm): 1609;
TOLD320ABB by Toshiba

TOLD320ABB

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .000000001 s; Minimum Operating Temperature: -10 Cel; Maximum Forward Voltage: 1.5 V; Peak Wavelength (nm): 1310;
NX8570SC976-BA-A by Renesas Electronics

NX8570SC976-BA-A

Renesas Electronics

LASER DIODE; Semiconductor Material: InGaAsP; Maximum Operating Temperature: 70 Cel; Minimum Operating Temperature: -5 Cel; Peak Wavelength (nm): 1597; Maximum Forward Current: .3 A;
NX8565LE728-CC by Renesas Electronics

NX8565LE728-CC

Renesas Electronics

LASER DIODE; Mounting Feature: SURFACE MOUNT; Maximum Operating Temperature: 70 Cel; Maximum Forward Voltage: 2 V; Maximum Response Time: .000000000125 s; Semiconductor Material: GaAs;
NX8567SAM330-CC by Renesas Electronics

NX8567SAM330-CC

Renesas Electronics

LASER DIODE; Maximum Response Time: .000000000125 s; Maximum Forward Current: .15 A; Maximum Forward Voltage: 2 V; Maximum Operating Temperature: 70 Cel; Minimum Operating Temperature: -5 Cel;