Renesas Electronics - PF0032

NXP Semiconductors' BGA2003T/R is a wide band low power RF amplifier with 16 dB gain, operating from 900 MHz to 1800 MHz. Ideal for RF applications requiring a 50 ohm impedance, this component offers high performance in amplifying signals within the specified frequency range.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Supply Current: 85 mA;

The Qorvo SGL0363ZSR is a wide band low power RF amplifier with 15 dB gain and 50 ohm impedance. It operates from 5 MHz to 2000 MHz, with a max input power of 18 dBm. This component is ideal for RF and microwave applications requiring high performance in a compact package.

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: GAN; No. of Functions: 1;

Qorvo's NBB-400-D is a wide band low power RF amplifier with 15.5 dB gain, suitable for frequencies ranging from 0 to 8000 MHz. It can handle up to 20 dBm CW input power and has a VSWR of 1.9, making it ideal for various RF and microwave applications. Operating temperatures range from -45°C to 85°C, with a characteristic impedance of 50 ohms.

RF/Microwave Amplifiers; No. of Terminals: 8; Package Body Material: METAL; Technology: HYBRID; Screening Level: 38535Q/M;38534H;883B; No. of Functions: 1;

Broadcom's MGA-85563-BLKG is a GAAS technology RF amplifier with 14.5 dB gain, operating from 800 MHz to 6 GHz. With a max input power of 13 dBm and VSWR of 1.3, it is ideal for wideband low-power applications requiring surface mount construction.

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; No. of Functions: 1; Power Supplies (V): 28;

ADL8142ACPZN-R7 by Analog Devices is a PHEMT RF amplifier with 24.5 dB gain, operating b/w 23-31 GHz. It has a max input power of 20 dBm and VSWR of 1.38, suitable for wideband low-power applications in RF & microwave systems. With surface mounting feature, it operates from -40 to 85°C with a supply voltage of 2V.

Broadcom's MGA-81563-TR1G is a GAAS RF amplifier with 10.5 dB gain, operating from 100 MHz to 6 GHz. It has a max input power of 13 dBm and VSWR of 2, suitable for wideband low-power applications in temperatures ranging from -40°C to 85°C.

CHA3666-QAG by United Monolithic is a wide band low power RF amplifier with 19 dB gain. It operates b/w 5800-17000 MHz, handling up to 10 dBm CW input power. Ideal for RF applications, it can withstand temperatures from -40°C to 85°C.

AD8350ARMZ20 by Analog Devices is a wide band medium power RF amplifier with 19 dB gain and 1000 MHz max operating frequency. It can handle up to 8 dBm CW input power, making it ideal for RF applications requiring high performance in the -40 to 85°C temperature range.

The NXP Semiconductors MW7IC008NT1 is a MOS technology RF amplifier with 2 functions, offering a gain of 21.5 dB and operating frequency range from 100 MHz to 1000 MHz. It has a max input power of 38 dBm and VSWR of 10, suitable for wideband high-power applications in RF and microwave systems. The component comes in a plastic/epoxy package with matte tin finish, featuring 24 terminals for surface mount installation at a power supply of 28V.

HMC451LC3 by Analog Devices is a wide band low power RF amplifier with 14 dB gain and operates b/w 5-20 GHz. It has a max input power of 10 dBm, requires 5V supply, and features a surface mount package ideal for RF & microwave applications.

Analog Devices' HMC8411LP2FE is a wide band low power RF amplifier with 11 dB gain and 20 dBm CW input power. Operating from 10 MHz to 10 GHz, it is ideal for RF & microwave applications requiring high performance in temperatures ranging from -40°C to 85°C.

The Qorvo NBB-310 is a ceramic RF amplifier with 20 dBm CW input power, 2 VSWR, and 9 dB gain. Ideal for wideband low-power applications in the 0-12000 MHz range. Suitable for surface mount installations with a temperature range of -45 to 85°C.

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 12; Package Body Material: CERAMIC; Technology: GAAS; Minimum Operating Temperature: -40 Cel;

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Minimum Operating Temperature: -40 Cel;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: CERAMIC; Technology: GAAS; Maximum Operating Temperature: 85 Cel;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Supply Current: 48 mA;