Renesas Electronics - PF0150

WIDE BAND HIGH POWER;

WIDE BAND LOW POWER;

MAX2643EXT-T by Maxim Integrated is a wide band low power RF amplifier with 14.5 dB gain, operating from 800-1000 MHz. It can handle up to 5 dBm CW input power and operates in temperatures ranging from -40°C to 85°C. Ideal for RF and microwave applications requiring high gain amplification within specified frequency range.

WIDE BAND LOW POWER; Technology: GAAS; Gain: 17.5 dB; Minimum Operating Frequency: 2000 MHz; Construction: COMPONENT; Maximum Operating Frequency: 20000 MHz;

WIDE BAND LOW POWER; Maximum Operating Frequency: 40000 MHz; Minimum Operating Temperature: -55 Cel; Additional Features: LOW NOISE; JESD-609 Code: e4; Minimum Operating Frequency: 24000 MHz;

MAX2611EUS-T by Maxim Integrated is a wide band low power RF amplifier with 17.3 dB gain, operating from 0 to 1100 MHz. It has a max input power of 13 dBm and VSWR of 1.6, suitable for applications requiring surface mount construction in RF & microwave systems.

Broadcom's MSA-1105-STRG is a RF & Microwave Amplifier with 10dB gain, operating from 50MHz to 1300MHz. Featuring a max input power of 13dBm and VSWR of 1.7, it is ideal for wideband low-power applications requiring a characteristic impedance of 50Ω.

Broadcom's MGA-545P8-TR1 is a GAAS RF amplifier with 10.5 dB gain, operating from 50 MHz to 7 GHz. It has a max input power of 20 dBm and operates on a 3.3V power supply. This wide band medium power amplifier is ideal for applications requiring surface mount construction in RF & microwave systems.

Analog Devices' HMC8500PM5ETR is a GaN wide band high power RF amplifier with 12 dB gain, operating from 10 MHz to 2800 MHz. It has a max input power of 33 dBm and VSWR of 6, suitable for applications requiring high power amplification in RF and microwave systems. The component is housed in a plastic/epoxy package with 32 terminals, designed for surface mount installation at temperatures ranging from -40°C to 85°C.

Broadcom's MGA-30889-TR1G is a GAAS RF amplifier with 14.6dB gain, operating from 40MHz to 2600MHz. It has a max input power of 20dBm and requires a 5V power supply, making it ideal for wideband low-power applications in RF and microwave systems.

NARROW BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: MOS; Terminal Finish: Matte Tin (Sn); Characteristic Impedance: 50 ohm; Construction: COMPONENT;

BGU6005/N2X by NXP Semiconductors is a narrow band low power RF amplifier with 17.5 dB gain and 50 ohm impedance. It operates b/w 1559-1610 MHz, handles up to 10 dBm input power, and has a max VSWR of 1.43. This component is ideal for applications requiring surface mounting in RF & microwave systems.

NARROW BAND LOW POWER;

ADL8142ACPZN by Analog Devices is a PHEMT RF amplifier with 24.5 dB gain, operating b/w 23-31 GHz. It has a max input power of 20 dBm and VSWR of 1.38, suitable for wideband low-power applications in RF & microwave systems. With surface mounting feature, it operates from -40 to 85°C with a characteristic impedance of 50 ohms.

The Qorvo TQP3M9035 is a wide band medium power RF amplifier with 15 dB gain, suitable for frequencies ranging from 50 MHz to 6 GHz. It can handle up to 23 dBm of CW input power and operates in temperatures from -40°C to 85°C. Ideal for RF and microwave applications requiring high performance amplification.

WIDE BAND MEDIUM POWER; Terminal Finish: Matte Tin (Sn); Maximum Operating Frequency: 6000 MHz; Construction: COMPONENT; Minimum Operating Frequency: 0 MHz; Minimum Operating Temperature: -40 Cel;

Wolfspeed's CMPA0060002F is a wide band high power RF module with 13.5 dB gain, operating from 20 MHz to 6 GHz. It has a VSWR of 5 and operates b/w -40°C to 150°C. Ideal for RF & microwave applications requiring high power amplification in a compact form factor.

TRF37C73IDSGT by Texas Instruments is a wide band low power RF amplifier with 18dB gain, operating from 1MHz to 6GHz. It has a max input power of 10dBm and operates on a 3.3V supply, suitable for applications requiring high frequency amplification in RF systems. The component comes in an 8-terminal plastic/epoxy package for surface mounting, making it ideal for various RF and microwave applications.

HMC907APM5E by Analog Devices is a wide band medium power RF amplifier with 12 dB gain and 25 dBm max input power. It operates from 200 MHz to 22 GHz, has a VSWR of 7, and requires a 10V supply. Ideal for RF & microwave applications requiring high performance in plastic/epoxy package.

ADPA1105ACGZN by Analog Devices is a GAN RF amplifier with 30.5 dB gain, operating from 900 MHz to 1600 MHz. It has a max input power of 30 dBm and VSWR of 1.5, suitable for narrowband high-power applications in RF & microwave systems. With surface mounting feature and operating temperatures from -40°C to 85°C, it offers reliable performance in various environments.