Renesas Electronics - PF0231A

  1. Home
  2. Renesas Electronics - PF0231A
PF0231A by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number PF0231A
Description NARROW BAND MEDIUM POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Package Equivalence Code: FLNG,1.0"H.SPACE; Power Supplies (V): 4.8;
Datasheet PF0231A Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Package Equivalence Code: FLNG,1.0"H.SPACE
Technology: HYBRID
Sub-Category: RF/Microwave Amplifiers
RF or Microwave Device Type: NARROW BAND MEDIUM POWER
Power Supplies (V): 4.8
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

HMC1040LP3CE by Hittite Microwave

HMC1040LP3CE

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: PHEMT; No. of Functions: 1;
HMC478ST89ETR by Hittite Microwave

HMC478ST89ETR

Hittite Microwave

WIDE BAND LOW POWER; Gain: 11 dB; JESD-609 Code: e3; Minimum Operating Frequency: 0 MHz; Terminal Finish: Matte Tin (Sn); Maximum Operating Frequency: 4000 MHz;
MAX2232EEE+ by Analog Devices

MAX2232EEE+

Analog Devices

Analog Devices' MAX2232EEE+ is a RF amplifier with 23.9 dB gain, operating b/w 800-1000 MHz. It has a max input power of 10 dBm and VSWR of 1.5, ideal for narrowband medium power applications in temperatures ranging from -40 to 85°C.
RFPA3800SR by Rf Micro Devices

RFPA3800SR

Rf Micro Devices

WIDE BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Screening Level: IEC-61249-2-21;
HMC636ST89ETR by Analog Devices

HMC636ST89ETR

Analog Devices

Analog Devices' HMC636ST89ETR is a wide band low power RF amplifier with 5dB gain, operating from 200MHz to 4GHz. It has a max input power of 16dBm and operates on a 5V supply. Ideal for applications requiring surface mount construction in RF & microwave systems.
HMC549MS8GTR by Hittite Microwave

HMC549MS8GTR

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Minimum Operating Temperature: -40 Cel;
MGA-81563 by Broadcom

MGA-81563

Broadcom

Broadcom's MGA-81563 is a GAAS RF amplifier with 6 terminals, operating from -40°C to 85°C. It requires 3V power supply, draws max 51mA current, and has a surface mount package. Ideal for applications requiring high-frequency signal amplification in various electronic devices.
HMC994ALP5E by Analog Devices

HMC994ALP5E

Analog Devices

HMC994ALP5E by Analog Devices is a PHEMT RF amplifier with 11 dB gain, operating up to 28 GHz. It features a max supply current of 300 mA and is designed for wideband medium power applications in a surface mount package with 32 terminals.
MAAL-011129-TR1000 by M/a-com Technology Solutions

MAAL-011129-TR1000

M/a-com Technology Solutions

MAAL-011129-TR1000 by M/a-com Technology Solutions is a wide band low power RF amplifier with 20 dB gain. It operates b/w 18-31.5 GHz, handling up to 10 dBm CW input power. Ideal for RF applications requiring high performance in temperatures ranging from -40 to 85°C.
HMC1053 by Hittite Microwave

HMC1053

Hittite Microwave

WIDE BAND HIGH POWER; Terminal Finish: Gold (Au); JESD-609 Code: e4;
MGA-86576-STR by Agilent Technologies

MGA-86576-STR

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: METAL; Technology: GAAS; Characteristic Impedance: 50 ohm;
MGA-72543-TR1 by Agilent Technologies

MGA-72543-TR1

Agilent Technologies

WIDE BAND LOW POWER; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Construction: COMPONENT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Input Power (CW): 20 dBm;
QPA9121TR7 by Qorvo

QPA9121TR7

Qorvo

Qorvo's QPA9121TR7 is a GAAS RF amplifier with 24dB gain, operating from 2300-5000MHz. It has a max input power of 10dBm and VSWR of 2, suitable for wideband medium power applications. With a compact PLASTIC/EPOXY package and surface mount feature, it's ideal for RF & Microwave systems requiring high performance in temperatures ranging from -40 to 105°C.
HMC451LP3E by Analog Devices

HMC451LP3E

Analog Devices

HMC451LP3E by Analog Devices is a GAAS RF amplifier with 12.5 dB gain, operating from 5V supply at frequencies ranging from 5-18000 MHz. With a max input power of 10 dBm, it is ideal for wide band low power applications in RF and microwave systems requiring surface mount components.
BLM7G1822S-20PBGY by NXP Semiconductors

BLM7G1822S-20PBGY

NXP Semiconductors

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Package Equivalence Code: SOP16(UNSPEC); No. of Functions: 2;
MMZ09332BT1 by Freescale Semiconductor

MMZ09332BT1

Freescale Semiconductor

NARROW BAND MEDIUM POWER; Maximum Input Power (CW): 29 dBm; Minimum Operating Frequency: 130 MHz; Characteristic Impedance: 50 ohm; Gain: 28.7 dB; Maximum Operating Frequency: 1000 MHz;
XP1050-QJ-0G00 by Mimix Broadband

XP1050-QJ-0G00

Mimix Broadband

WIDE BAND HIGH POWER; Construction: COMPONENT; JESD-609 Code: e3; Terminal Finish: Matte Tin (Sn); Minimum Operating Frequency: 7000 MHz; Minimum Operating Temperature: -40 Cel;
MAAM-011112-TR0500 by M/a-com Technology Solutions

MAAM-011112-TR0500

M/a-com Technology Solutions

MAAM-011112-TR0500 by M/a-com Technology Solutions is a wide band low power RF amplifier with 21 dB gain. It operates b/w 20-37 GHz, suitable for various RF & microwave applications. With a max input power of 0 dBm and operating temperature range from -40 to 85°C, it offers reliable performance in diverse environments.
TQP7M9102-PCB900 by Qorvo

TQP7M9102-PCB900

Qorvo

WIDE BAND MEDIUM POWER; Terminal Finish: NICKEL PALLADIUM GOLD; JESD-609 Code: e4;
HMC6981LS6 by Analog Devices

HMC6981LS6

Analog Devices

Analog Devices' HMC6981LS6 is a wide band high power RF amplifier with 23 dB gain, operating from 15-20 GHz. It has a max input power of 18 dBm and operates on a 5.5V supply, drawing up to 1100 mA. Ideal for applications requiring high power amplification in the RF & Microwave domain.