Renesas Electronics - PF0231A

  1. Home
  2. Renesas Electronics - PF0231A
PF0231A by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number PF0231A
Description NARROW BAND MEDIUM POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Package Equivalence Code: FLNG,1.0"H.SPACE; Power Supplies (V): 4.8;
Datasheet PF0231A Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Package Equivalence Code: FLNG,1.0"H.SPACE
Technology: HYBRID
Sub-Category: RF/Microwave Amplifiers
RF or Microwave Device Type: NARROW BAND MEDIUM POWER
Power Supplies (V): 4.8
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

CMPA0060002F by Wolfspeed

CMPA0060002F

Wolfspeed

Wolfspeed's CMPA0060002F is a wide band high power RF module with 13.5 dB gain, operating from 20 MHz to 6 GHz. It has a VSWR of 5 and operates b/w -40°C to 150°C. Ideal for RF & microwave applications requiring high power amplification in a compact form factor.
MW7IC930NR1 by NXP Semiconductors

MW7IC930NR1

NXP Semiconductors

The NXP Semiconductors MW7IC930NR1 is a MOS RF amplifier with 33 dB gain, operating b/w 920-960 MHz. It has a max input power of 20 dBm and VSWR of 10, suitable for narrowband high-power applications at 28V supply voltage.
HMC451LP3E by Analog Devices

HMC451LP3E

Analog Devices

HMC451LP3E by Analog Devices is a GAAS RF amplifier with 12.5 dB gain, operating from 5V supply at frequencies ranging from 5-18000 MHz. With a max input power of 10 dBm, it is ideal for wide band low power applications in RF and microwave systems requiring surface mount components.
ADPA7007AEHZ-R7 by Analog Devices

ADPA7007AEHZ-R7

Analog Devices

ADPA7007AEHZ-R7 by Analog Devices is a wide band medium power RF amplifier with 18.5 dB gain, operating from 20-44 GHz. It features a max input power of 27 dBm and VSWR of 1.29, suitable for surface mount applications in RF & microwave systems requiring high performance amplification.
HMC635LC4 by Hittite Microwave

HMC635LC4

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; Package Equivalence Code: LCC24,.16SQ,20;
SST12CP11-QVCE by Microchip Technology

SST12CP11-QVCE

Microchip Technology

SST12CP11-QVCE by Microchip Technology is a RF & Microwave Amplifier with 16 terminals and operates on a 5V power supply. It features bipolar technology, can withstand temperatures from -40°C to 85°C, and comes in a surface mount package. Ideal for applications requiring high-frequency signal amplification.
LMV221SDX/NOPB by National Semiconductor

LMV221SDX/NOPB

National Semiconductor

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Terminal Finish: Matte Tin (Sn); Maximum Operating Temperature: 85 Cel;
MW7IC2750NBR1 by NXP Semiconductors

MW7IC2750NBR1

NXP Semiconductors

The NXP Semiconductors MW7IC2750NBR1 is a narrow band high power RF amplifier with a gain of 24 dB. It operates within the frequency range of 2500-2700 MHz and can handle a max input power of 30 dBm. This component is suitable for applications requiring high power amplification in RF and microwave systems.
HMC564LC4TR by Analog Devices

HMC564LC4TR

Analog Devices

Analog Devices' HMC564LC4TR is a wide band low power RF amplifier with 14 dB gain, operating from 7-14 GHz. It has a max input power of 20 dBm and operates on a 3V supply, drawing up to 75 mA. Ideal for RF and microwave applications requiring high frequency amplification in compact designs.
HMC311LP3ETR by Analog Devices

HMC311LP3ETR

Analog Devices

Analog Devices' HMC311LP3ETR is a GAAS RF amplifier with 12dB gain, 50 ohm impedance, and 10 dBm CW input power. It operates from 0 to 6000 MHz, drawing 74mA at 5V. Ideal for wideband low-power applications in temperatures ranging from -40°C to +85°C.
MBC13916NT1 by NXP Semiconductors

MBC13916NT1

NXP Semiconductors

NXP Semiconductors' MBC13916NT1 is a BICMOS wide band low power RF amplifier with 9.5 dB gain and 50 ohm impedance. It operates from 100 MHz to 2500 MHz, handling up to 10 dBm input power. Ideal for applications requiring compact, high-performance RF amplification in plastic/epoxy packages.
ERA-50SM by Mini-circuits

ERA-50SM

Mini-circuits

ERA-50SM by Mini-circuits is a wide band low power RF amplifier with 16 dB gain, operating from 0 to 1500 MHz. It has a max input power of 13 dBm and VSWR of 1.2, suitable for RF & microwave applications requiring surface mount construction.
AG303-86G by Wj Communications

AG303-86G

Wj Communications

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Maximum Operating Temperature: 85 Cel;
RF5110G by Qorvo

RF5110G

Qorvo

Qorvo's RF5110G is a GAAS technology narrow band high power amplifier with 32 dB gain. It operates b/w 880-915 MHz, handles up to 13 dBm CW input power, and has a VSWR of 10. Suitable for RF applications requiring high power amplification in the frequency range.
HMC465LP5E by Analog Devices

HMC465LP5E

Analog Devices

Analog Devices' HMC465LP5E is a wide band low power RF amplifier with 9.5 dB gain and 50 ohm impedance. Operating from 0 to 20000 MHz, it handles up to 23 dBm CW input power. Ideal for RF and microwave applications requiring high performance in plastic/epoxy package.
HMC8410LP2FETR by Analog Devices

HMC8410LP2FETR

Analog Devices

Analog Devices' HMC8410LP2FETR is a wide band low power RF amplifier with 13 dB gain and 50 ohm impedance. It operates from 10 MHz to 10 GHz, handling up to 20 dBm CW input power. Ideal for RF and microwave applications requiring high performance in temperatures ranging from -40°C to 85°C.
MAR-8ASM+ by Mini-circuits

MAR-8ASM+

Mini-circuits

MAR-8ASM+ by Mini-circuits is a wide band low power RF amplifier with 20 dB gain. It operates from 0 to 1000 MHz, handling up to 13 dBm CW input power. Ideal for RF & microwave applications, it features a compact surface mount package and operates in temperatures ranging from -40°C to 85°C.
NBB-400 by Qorvo

NBB-400

Qorvo

Qorvo's NBB-400 is a ceramic-packaged RF amplifier with 20 dBm CW input power, 1.9 VSWR, and 15.5 dB gain. Ideal for wideband low-power applications in the 0-8000 MHz range, it operates b/w -45°C to +85°C temperatures and requires a 3.9V supply voltage.
NBB-310 by Rf Micro Devices

NBB-310

Rf Micro Devices

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: CERAMIC; Technology: BIPOLAR; No. of Functions: 1;
MAX2659ELT/V+T by Analog Devices

MAX2659ELT/V+T

Analog Devices

MAX2659ELT/V+T by Analog Devices is a RF amplifier with 1.8/3.3V power supplies, BICMOS technology, and 5.6mA max supply current. It operates b/w -40 to 85°C, has AEC-Q100 screening level, and comes in a plastic/epoxy package. Ideal for RF & microwave applications requiring surface mounting feature.