Renesas Electronics - PF08127B

  1. Home
  2. Renesas Electronics - PF08127B
PF08127B by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number PF08127B
Description NARROW BAND LOW POWER; Maximum Input Power (CW): 10 dBm; Minimum Operating Temperature: -30 Cel; Characteristic Impedance: 50 ohm; Construction: COMPONENT; Maximum Voltage Standing Wave Ratio: 3;
Datasheet PF08127B Datasheet
NAME DESCRIPTION
Maximum Voltage Standing Wave Ratio: 3
Construction: COMPONENT
Maximum Input Power (CW): 10 dBm
Minimum Operating Frequency: 880 MHz
Characteristic Impedance: 50 ohm
Additional Features: IT CAN ALSO OPERATE AT 1710 TO 1785 MHZ AND 1850 TO 1910 MHZ
Maximum Operating Temperature: 100 Cel
Maximum Operating Frequency: 915 MHz
RF or Microwave Device Type: NARROW BAND LOW POWER
Minimum Operating Temperature: -30 Cel
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

TQP3M9008 by Qorvo

TQP3M9008

Qorvo

TQP3M9008 by Qorvo is a wide band medium power RF amplifier with 19 dB gain and 50 ohm impedance. It operates from 50 MHz to 4000 MHz, with a max input power of 23 dBm. Ideal for RF applications requiring high performance in plastic/epoxy package.
PTMA080152MV1AUMA1 by Infineon Technologies

PTMA080152MV1AUMA1

Infineon Technologies

Infineon's PTMA080152MV1AUMA1 is a wide band high power RF amplifier with 29 dB gain, 42 dBm CW input power, and VSWR of 10. Ideal for applications requiring amplification in the frequency range of 700-1000 MHz.
RDA1005LTR7 by Rf Micro Devices

RDA1005LTR7

Rf Micro Devices

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: PLASTIC/EPOXY; Minimum Operating Frequency: 50 MHz; Power Supplies (V): 5;
ADA-4643-BLKG by Agilent Technologies

ADA-4643-BLKG

Agilent Technologies

WIDE BAND LOW POWER; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; No. of Functions: 1; Power Supplies (V): 3.5; Terminal Finish: Tin (Sn);
HMC465LP5ETR by Hittite Microwave

HMC465LP5ETR

Hittite Microwave

WIDE BAND LOW POWER; Characteristic Impedance: 50 ohm; Minimum Operating Temperature: -40 Cel; Maximum Operating Temperature: 85 Cel; JESD-609 Code: e3; Terminal Finish: Matte Tin (Sn);
ERA-5SM+ by Mini-circuits

ERA-5SM+

Mini-circuits

ERA-5SM+ by Mini-circuits is a wide band low power RF amplifier with 12 dB gain, 50 ohm impedance, and 1.3 VSWR. It operates from 0 to 4000 MHz, handles up to 13 dBm input power, and has a compact surface mount package ideal for RF applications requiring amplification in the -45°C to 85°C temperature range.
MGA-53543-BLKG by Agilent Technologies

MGA-53543-BLKG

Agilent Technologies

WIDE BAND LOW POWER; Package Body Material: PLASTIC/EPOXY; Gain: 14 dB; Terminal Finish: Tin (Sn); JESD-609 Code: e3; Additional Features: LOW NOISE;
MAX2611EUS-T by Maxim Integrated

MAX2611EUS-T

Maxim Integrated

MAX2611EUS-T by Maxim Integrated is a wide band low power RF amplifier with 17.3 dB gain, operating from 0 to 1100 MHz. It has a max input power of 13 dBm and VSWR of 1.6, suitable for applications requiring surface mount construction in RF & microwave systems.
MGA-23003-TR1G by Broadcom

MGA-23003-TR1G

Broadcom

Broadcom's MGA-23003-TR1G is a GAAS RF amplifier with 32dB gain, operating b/w 3.3-3.8GHz. It has a max input power of 15dBm and is ideal for narrowband medium-power applications in the RF & Microwave field.
BGA2003T/R by NXP Semiconductors

BGA2003T/R

NXP Semiconductors

NXP Semiconductors' BGA2003T/R is a wide band low power RF amplifier with 16 dB gain, operating from 900 MHz to 1800 MHz. Ideal for RF applications requiring a 50 ohm impedance, this component offers high performance in amplifying signals within the specified frequency range.
MMG3H21NT1 by NXP Semiconductors

MMG3H21NT1

NXP Semiconductors

MMG3H21NT1 by NXP Semiconductors is a wide band medium power RF amplifier with 18.3 dB gain and 50 ohm impedance. It operates from 0 to 6000 MHz, handles up to 12 dBm input power, and draws a max of 110 mA at 5 V. Ideal for applications requiring high-frequency signal amplification in compact setups.
TCBT-14+ by Mini-circuits

TCBT-14+

Mini-circuits

TCBT-14+ by Mini-circuits is a wide band low power RF amplifier with max input power of 30 dBm and VSWR of 1.5. Operating from 10 MHz to 10 GHz, it's ideal for RF & microwave applications requiring high performance in a compact form factor. With gold over nickel finish, it ensures reliable operation in temperatures ranging from -40°C to 85°C.
MGA-86576-STR by Broadcom

MGA-86576-STR

Broadcom

Broadcom's MGA-86576-STR is a wide band low power RF amplifier with 20 dB gain, operating from 1500 MHz to 8000 MHz. It has a max input power of 13 dBm and VSWR of 2.5, making it ideal for applications requiring high frequency amplification in RF & microwave systems.
MSA-1105-TR1 by Broadcom

MSA-1105-TR1

Broadcom

Broadcom's MSA-1105-TR1 is a RF amplifier with 10dB gain, operating from 50MHz to 1300MHz. It has a max input power of 13dBm and VSWR of 1.7, suitable for wideband low-power applications. This component features a plastic/epoxy package body, surface mounting feature, and operates at 5.5V with a max supply current of 70mA.
ADL8107ACPZN by Analog Devices

ADL8107ACPZN

Analog Devices

ADL8107ACPZN by Analog Devices is a PHEMT technology RF amplifier with 18 dB gain, operating frequency range of 6-18 GHz, and max input power of 22 dBm. Ideal for wideband low-power applications in RF and microwave systems due to its high performance and compact surface-mount construction.
MGA-72543-BLK by Hewlett Packard

MGA-72543-BLK

Hewlett Packard

WIDE BAND LOW POWER; Minimum Operating Frequency: 100 MHz; Maximum Input Power (CW): 20 dBm; Construction: COMPONENT; Gain: 9.2 dB; Characteristic Impedance: 50 ohm;
ZX60-2411BM-S+ by Mini-circuits

ZX60-2411BM-S+

Mini-circuits

Mini-circuits' ZX60-2411BM-S+ is a COAXIAL RF amplifier with 9 dB Gain, operating from 1900 MHz to 2400 MHz. It has a Max Input Power of 16 dBm and VSWR of 1.65, making it ideal for NARROW BAND LOW POWER applications in RF & Microwave systems.
HMC441LM1 by Hittite Microwave

HMC441LM1

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Supply Current: 115 mA;
HMC943APM5ETR by Analog Devices

HMC943APM5ETR

Analog Devices

HMC943APM5ETR by Analog Devices is a wide band medium power RF amplifier with 20.5 dB gain, operating from 24-34 GHz. It can handle up to 20 dBm CW input power and has a max VSWR of 7. Ideal for applications requiring high frequency amplification in RF & microwave systems.
MGA-72543-TR2G by Broadcom

MGA-72543-TR2G

Broadcom

Broadcom's MGA-72543-TR2G is a GAAS RF amplifier with 9.2 dB gain, operating from 100 MHz to 6 GHz. It has a max input power of 20 dBm and VSWR of 2.1, suitable for wideband low-power applications in RF and microwave systems.