Renesas Electronics - PH103

  1. Home
  2. Renesas Electronics - PH103
PH103 by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number PH103
Description PHOTO DARLINGTON; Mounting Feature: THROUGH HOLE MOUNT; Maximum Power Dissipation: .1 W; Size: 5 mm; Maximum On State Current: .05 A; Nominal Light Current: 12 mA;
Datasheet PH103 Datasheet
NAME DESCRIPTION
Maximum Dark Current: 400 nA
Shape: RECTANGULAR
Configuration: SINGLE
Size: 5 mm
Sub-Category: Photo Transistors
Minimum Operating Temperature: -20 Cel
Mounting Feature: THROUGH HOLE MOUNT
Maximum On State Current: .05 A
No. of Functions: 1
Optoelectronic Type: PHOTO DARLINGTON
Nominal Light Current: 12 mA
Peak Wavelength (nm): 860
Maximum Power Dissipation: .1 W
Maximum Operating Temperature: 80 Cel
Minimum Collector-emitter Breakdown Voltage: 30 V
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

BPV11 by Telefunken Microelectronics

BPV11

Telefunken Microelectronics

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Response Time: .0000033 s; Maximum Dark Current: 3 nA; Peak Wavelength (nm): 800;
TIL63 by Texas Instruments

TIL63

Texas Instruments

TIL63 by Texas Instruments is a phototransistor with peak wavelength of 820nm. It operates b/w -40°C to 85°C, dissipating up to 0.05W power. With a response time of 0.000008s, it's ideal for applications requiring precise light detection in various environments.
SFH313FA-3/4 by Osram Opto Semiconductors

SFH313FA-3/4

Osram Opto Semiconductors

The Osram Opto Semiconductors SFH313FA-3/4 is a 5mm phototransistor with peak wavelength of 870nm. It operates b/w -40 to 100°C, with max power dissipation of 0.2W and response time of 0.000014s. Ideal for applications requiring fast light detection in IR range, such as optical sensors and proximity detectors.
SFH303-2 by Infineon Technologies

SFH303-2

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Power Dissipation: .2 W; Peak Wavelength (nm): 850; Maximum Operating Temperature: 100 Cel;
ALS-PT19-315C/L177/TR8 by Everlight Electronics

ALS-PT19-315C/L177/TR8

Everlight Electronics

Everlight Electronics' ALS-PT19-315C/L177/TR8 is a 1.2mm RECTANGULAR PHOTO TRANSISTOR with peak wavelength of 630nm. It operates b/w -40°C to 85°C, with light current of 1.52mA and dark current up to 100nA. Ideal for SURFACE MOUNT applications at a supply voltage of 5V.
SFH303-3 by Infineon Technologies

SFH303-3

Infineon Technologies

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Power Dissipation: .2 W; Size: 5 mm; Configuration: SINGLE;
SFH302-6 by Infineon Technologies

SFH302-6

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Dark Current: 200 nA; Maximum Operating Temperature: 100 Cel; Maximum Power Dissipation: .15 W;
TPS606-B by Toshiba

TPS606-B

Toshiba

PHOTO TRANSISTOR; Nominal Light Current: .01 mA; Configuration: SINGLE; Infrared (IR) Range: NO; No. of Functions: 1; Minimum Operating Temperature: -25 Cel;
TPS622(F) by Toshiba

TPS622(F)

Toshiba

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum Dark Current: 100 nA; Size: 1.5 mm; Additional Features: SIDE VIEW; Maximum On State Current: .05 A;
SFH3710-3/4-Z by Osram Opto Semiconductors

SFH3710-3/4-Z

Osram Opto Semiconductors

Osram Opto Semiconductors SFH3710-3/4-Z is a single phototransistor with peak wavelength of 570nm. It operates b/w -40°C to 85°C, producing nominal light current of 0.35mA and max dark current of 50nA. Ideal for applications requiring square shape optoelectronic components in compact 0.29mm size.
OP802WSL by Tt Electronics Plc

OP802WSL

Tt Electronics Plc

OP802WSL by Tt Electronics Plc is a single phototransistor with a round shape. It operates b/w -65°C to 125°C, with a max power dissipation of 0.25W. Ideal for applications requiring nominal light current of 2.5mA and min collector-emitter breakdown voltage of 30V in the infrared range.
SD3410-001 by Micro Switch

SD3410-001

Micro Switch

PHOTO DARLINGTON; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -55 Cel; Maximum Dark Current: 250 nA; Maximum Operating Temperature: 125 Cel; Maximum Power Dissipation: .15 W;
BP103 by Infineon Technologies

BP103

Infineon Technologies

Infineon Technologies' BP103 phototransistor operates b/w -40°C to 80°C with peak wavelength of 850nm. It has a max on-state current of 0.1A and dark current of 100nA, making it ideal for through-hole mounting applications.
SFH3201-2 by Infineon Technologies

SFH3201-2

Infineon Technologies

Photo Transistors; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 85 Cel; Peak Wavelength (nm): 850; Maximum Power Dissipation: .12 W;
BPW17N by Telefunken Microelectronics

BPW17N

Telefunken Microelectronics

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Maximum Response Time: .0000016 s; Maximum Power Dissipation: .1 W;
TPS605(LB) by Toshiba

TPS605(LB)

Toshiba

PHOTO DARLINGTON; No. of Functions: 1; Maximum Dark Current: 250 nA; Size: 1.6 mm; Infrared (IR) Range: NO; Minimum Collector-emitter Breakdown Voltage: 30 V;
TIL402 by Texas Instruments

TIL402

Texas Instruments

TIL402 by Texas Instruments is a phototransistor with max temp of 125°C and min temp of -60°C. It has a max power dissipation of 0.05W, dark current of 25nA, and response time of 8μs. Ideal for applications requiring through hole mounting such as light sensing in various electronic devices.
TIL81 by Texas Instruments

TIL81

Texas Instruments

TIL81 by Texas Instruments is a phototransistor with peak wavelength of 900nm. It has max operating temp of 125°C and min of -60°C. With max power dissipation of 0.25W, it's ideal for applications requiring fast response time such as light sensing in industrial automation.
SFH325FA-4-Z by Osram Opto Semiconductors

SFH325FA-4-Z

Osram Opto Semiconductors

SFH325FA-4-Z by Osram Opto Semiconductors is a 2.4mm single phototransistor with peak wavelength of 980nm. It operates b/w -40°C to 100°C, with min collector-emitter breakdown voltage of 35V. Ideal for applications requiring infrared detection and light current of 0.04mA.
SFH314-3 by Infineon Technologies

SFH314-3

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Maximum On State Current: .05 A; Minimum Operating Temperature: -55 Cel;