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| Manufacturer | Renesas Electronics |
|---|---|
| Manufacturer's Part Number | PM5050N |
| Description | Power Field-Effect Transistors; Maximum Power Dissipation (Abs): 300 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (Abs) (ID): 50 A; No. of Elements: 1; Maximum Drain Current (ID): 50 A; |
| Datasheet | PM5050N Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Maximum Power Dissipation (Abs): | 300 W |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| No. of Elements: | 1 |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Drain Current (ID): | 50 A |
| Maximum Drain Current (Abs) (ID): | 50 A |
| Sub-Category: | FET General Purpose Power |
