Renesas Electronics - RBA250N04AHPF-4UA01#GB0

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RBA250N04AHPF-4UA01#GB0 by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number RBA250N04AHPF-4UA01#GB0
Description Power Field-Effect Transistors;
Datasheet RBA250N04AHPF-4UA01#GB0 Datasheet
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FQD7P20TM by Fairchild Semiconductor

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IRFZ44NSTRLPBF by Infineon Technologies

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FDD4243-F085 by Onsemi

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NVTFS5116PLTAG by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, 126A IDM, and 0.072ohm RDS(on). Ideal for power management applications in small outline packages. Operating at up to 175°C, it features a built-in diode and avalanche energy rating of 45mJ.
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SI4532DY by Onsemi

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FDD6637 by Fairchild Semiconductor

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