Renesas Electronics - RBK04U04GNS-0000#HBH

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RBK04U04GNS-0000#HBH by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number RBK04U04GNS-0000#HBH
Description Power Field-Effect Transistors;
Datasheet RBK04U04GNS-0000#HBH Datasheet
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ATP304-TL-H by Onsemi

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IRF640PBF by Vishay Siliconix

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NTD3055L104T4G by Onsemi

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ZXMP6A13GTA by Diodes Incorporated

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FQB47P06TM_AM002 by Fairchild Semiconductor

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SI7252DP-T1-GE3 by Vishay Intertechnology

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FQP30N06L by Onsemi

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FQP30N06L by Onsemi is a N-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 128A IDM Pulsed Drain Current, 350mJ EAS Avalanche Energy Rating, and 0.045 ohm RDS(ON). The transistor operates in ENHANCEMENT MODE and has a max power dissipation of 79W at 175°C.
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Vishay Siliconix

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MMBF170 by Diodes Incorporated

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