Renesas Electronics - RBN25H125S1FPQ-A0

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RBN25H125S1FPQ-A0 by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number RBN25H125S1FPQ-A0
Description Insulated Gate Bipolar Transistors;
Datasheet RBN25H125S1FPQ-A0 Datasheet
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FGD4536TM-F065 by Onsemi

FGD4536TM-F065

Onsemi

Onsemi's FGD4536TM-F065 is an N-CHANNEL IGBT with VCEsat of 1.8V and max power dissipation of 125W. Ideal for general purpose switching applications, it has a turn off time of 292ns and operates b/w -55 to 150°C.
AFGHL50T65SQDC by Onsemi

AFGHL50T65SQDC

Onsemi

AFGHL50T65SQDC by Onsemi is an N-CHANNEL IGBT with VCEsat of 2.1V, IC of 100A, and Ptot of 238W. Ideal for power control applications due to its fast turn-off time (toff) of 160.8ns and high operating temperature range (-55 to 175°C).
IRG4BC30W-SPBF by International Rectifier

IRG4BC30W-SPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 23 A; Maximum Collector-Emitter Voltage: 600 V;
APT85GR120B2 by Microchip Technology

APT85GR120B2

Microchip Technology

Microchip Technology's APT85GR120B2 is an N-CHANNEL IGBT transistor with 1200V max collector-emitter voltage and 170A max collector current. Ideal for motor control applications, it has a 445ns turn-off time, 113ns turn-on time, and can handle up to 962W power dissipation.
IRG4PSH71KDPBF by Infineon Technologies

IRG4PSH71KDPBF

Infineon Technologies

IRG4PSH71KDPBF by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 1200V and a max collector current of 78A. It has a single configuration with built-in diode, making it ideal for motor control applications. With a max power dissipation of 140W and operating temperature of 150°C, this transistor offers fast switching times for efficient performance.
RGW80TS65CHRC11 by ROHM

RGW80TS65CHRC11

ROHM

ROHM RGW80TS65CHRC11 is an N-CHANNEL IGBT with VCEsat of 1.9V and IC of 81A, ideal for POWER CONTROL applications. It has a max VCE of 650V and turn-off time of 185ns, suitable for high-power systems. The transistor operates b/w -40 to 175°C, making it versatile in various environments.
FGA30T65SHD by Fairchild Semiconductor

FGA30T65SHD

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 238 W; Maximum Collector Current (IC): 60 A; No. of Terminals: 3;
HGTD1N120BNS9A by Fairchild Semiconductor

HGTD1N120BNS9A

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 5.3 A; Maximum Gate-Emitter Voltage: 20 V;
6PS04512E43G37986NOSA1 by Infineon Technologies

6PS04512E43G37986NOSA1

Infineon Technologies

Infineon's 6PS04512E43G37986NOSA1 is an N-CHANNEL IGBT with 6 elements, max voltage of 1200V, and operating temp of 150°C. Ideal for power control applications due to its silicon material and isolated case connection in a rectangular package style.
FS150R12KT3 by Infineon Technologies

FS150R12KT3

Infineon Technologies

FS150R12KT3 by Infineon Technologies is a N-CHANNEL IGBT with 6 elements in bridge configuration. It has a VCEsat of 2.15V, IC of 200A, and Pmax of 700W. Ideal for high-power applications like motor drives and inverters due to its low on/off times and high collector-emitter voltage capability.
IXYF40N450 by Littelfuse

IXYF40N450

Littelfuse

Littelfuse IXYF40N450 is an N-CHANNEL IGBT with 4500V VCEsat, 60A IC, and 290W power dissipation. Ideal for POWER CONTROL applications due to its fast turn-off time of 1128ns and high operating temperature range from -55°C to 150°C. Package style is IN-LINE with PLASTIC/EPOXY body material.
IXXH50N60C3D1 by Littelfuse

IXXH50N60C3D1

Littelfuse

IXXH50N60C3D1 by Littelfuse is an N-CHANNEL IGBT with a max VCEsat of 2.3V and a max collector current (IC) of 100A. It is commonly used for power control applications due to its high power dissipation of 600W and fast nominal turn off time (toff) of 170ns.
IGA03N120H2XKSA1 by Infineon Technologies

IGA03N120H2XKSA1

Infineon Technologies

Infineon's IGA03N120H2XKSA1 is an N-Channel IGBT with 1200V VCE, 310ns toff, and 14.4ns ton. Ideal for high-power applications requiring fast switching such as industrial motor drives and renewable energy systems.
IHW30N160R5XKSA1 by Infineon Technologies

IHW30N160R5XKSA1

Infineon Technologies

IHW30N160R5XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max VCEsat of 2.15V and a max IC of 60A. It is designed for power control applications, featuring a built-in diode, 1600V max collector-emitter voltage, and 263W max power dissipation.
ISL9V3036S3ST by Onsemi

ISL9V3036S3ST

Onsemi

ISL9V3036S3ST by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 1.6V and a max IC of 21A. Ideal for automotive ignition applications, it features a built-in diode and resistor, operates at temperatures ranging from -40 to 175 °C, and has a package style of SMALL OUTLINE.
IXGH60N60C3D1 by IXYS Corporation

IXGH60N60C3D1

IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 380 W; Maximum Collector Current (IC): 75 A; Package Body Material: PLASTIC/EPOXY;
2MBI200VA-060-50 by Fuji Electric

2MBI200VA-060-50

Fuji Electric

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 200 A; Package Style (Meter): FLANGE MOUNT; Maximum VCEsat: 2.25 V;
MIXA60W1200TED by IXYS Corporation

MIXA60W1200TED

IXYS Corporation

N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 290 W; Maximum Collector Current (IC): 85 A; Terminal Form: UNSPECIFIED;
FS215R04A1E3DBOMA1 by Infineon Technologies

FS215R04A1E3DBOMA1

Infineon Technologies

Infineon's FS215R04A1E3DBOMA1 is an N-Channel IGBT with VCEsat of 1.7V, toff of 340ns, and Pmax of 715W. Ideal for high-power applications requiring a max VCE of 400V, such as motor drives and renewable energy systems. Operating temperatures range from -40°C to 150°C.
IXGH16N170A by IXYS Corporation

IXGH16N170A

IXYS Corporation

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 190 W; Maximum Collector Current (IC): 16 A; Maximum Time At Peak Reflow Temperature (s): 10;