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| Manufacturer | Renesas Electronics |
|---|---|
| Manufacturer's Part Number | RBN40H65T1FPQ-A0#CB0 |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 185 W; Maximum Collector Current (IC): 80 A; Maximum Gate-Emitter Voltage: 30 V; |
| Datasheet | RBN40H65T1FPQ-A0#CB0 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Collector Current (IC): | 80 A |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Transistor Application: | POWER CONTROL |
| Maximum Gate-Emitter Threshold Voltage: | 5.9 V |
| Surface Mount: | NO |
| Nominal Turn Off Time (toff): | 180 ns |
| No. of Terminals: | 3 |
| Maximum Power Dissipation (Abs): | 185 W |
| Terminal Position: | SINGLE |
| Nominal Turn On Time (ton): | 41 ns |
| Package Style (Meter): | FLANGE MOUNT |
| JESD-30 Code: | R-PSFM-T3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | THROUGH-HOLE |
| Maximum Operating Temperature: | 175 Cel |
| Case Connection: | COLLECTOR |
| JEDEC-95 Code: | TO-247AD |
| Polarity or Channel Type: | N-CHANNEL |
| Maximum Collector-Emitter Voltage: | 650 V |
| Maximum Gate-Emitter Voltage: | 30 V |
| Peak Reflow Temperature (C): | NOT SPECIFIED |
| Maximum VCEsat: | 2 V |
