Renesas Electronics - RBN50H65T1FPQ-A0

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RBN50H65T1FPQ-A0 by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number RBN50H65T1FPQ-A0
Description Insulated Gate Bipolar Transistors;
Datasheet RBN50H65T1FPQ-A0 Datasheet
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IRGS14C40LPBF by Infineon Technologies

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IRGS14C40LPBF by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 370V and a max collector current of 20A. It is designed for automotive ignition applications, featuring a built-in diode and resistor in a surface-mount package style. The transistor has a max power dissipation of 125W and can operate at temperatures up to 175°C.
NGTB15N120IHRWG by Onsemi

NGTB15N120IHRWG

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Insulated Gate Bipolar Transistors; Terminal Finish: Matte Tin (Sn) - annealed; JESD-609 Code: e3;
IRG4PF50WPBF by International Rectifier

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N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 51 A; JEDEC-95 Code: TO-247AC;
IRG4BC30FD1PBF by International Rectifier

IRG4BC30FD1PBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 31 A; Maximum Operating Temperature: 150 Cel;
FF600R17ME4BOSA1 by Infineon Technologies

FF600R17ME4BOSA1

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Infineon Technologies' FF600R17ME4BOSA1 is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a max voltage of 1700V and max current of 950A, suitable for POWER CONTROL applications. With a toff of 980ns and ton of 320ns, it offers efficient switching in RECTANGULAR package style.
HGT1S10N120BNST by Onsemi

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HGT1S10N120BNST by Onsemi is an N-CHANNEL IGBT transistor with a max VCEsat of 4.2V and a max collector-emitter voltage of 1200V. It is designed for motor control applications, featuring a rise time of 15ns and a power dissipation of 298W. This single configuration transistor operates b/w -55 to 150 °C and has a gate-emitter voltage of up to 20V.
IRGB4056DPBF by Infineon Technologies

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Infineon Technologies

IRGB4056DPBF by Infineon Technologies is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 600V and Max Collector Current of 24A. It has a Power Dissipation of 140W, making it suitable for POWER CONTROL applications requiring fast switching times (tr: 24ns, tf: 31ns) and high efficiency in a RECTANGULAR package.
IXXH75N60C3D1 by IXYS Corporation

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IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 750 W; Maximum Collector Current (IC): 150 A; Package Body Material: PLASTIC/EPOXY;
NGTB50N120FL2WG by Onsemi

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NGTB50N120FL2WG by Onsemi is an N-CHANNEL IGBT with 1200V VCE, 100A IC, and 535W Pd. Ideal for high-power applications like motor drives, inverters, and power supplies due to its robust design and high operating temperature of 175°C.
FF600R12ME4B11BPSA1 by Infineon Technologies

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Infineon Technologies' FF600R12ME4B11BPSA1 is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, built-in diode, and thermistor. It has a max voltage of 1200V and current of 995A, ideal for power control applications. Featuring a turn off time of 770ns and turn on time of 310ns, it is UL RECOGNIZED and comes in a FLANGE MOUNT package style.
HGTD1N120BNS9A by Intersil

HGTD1N120BNS9A

Intersil

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 5.3 A; Transistor Element Material: SILICON;
IXXX300N60C3 by IXYS Corporation

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IXYS Corporation

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 2300 W; Maximum Collector Current (IC): 510 A; Terminal Finish: Matte Tin (Sn); Maximum Gate-Emitter Threshold Voltage: 5.5 V;
STGB30M65DF2 by STMicroelectronics

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STMicroelectronics

STGB30M65DF2 by STMicroelectronics is an N-CHANNEL IGBT with 650V VCE, 60A IC, and 2V VCEsat. Ideal for POWER CONTROL applications due to its built-in diode, low turn-off time of 310ns, and high power dissipation of 258W. Suitable for surface mount with gull wing terminals in a small outline package.
FF300R12KE4HOSA1 by Infineon Technologies

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FF300R12KE4HOSA1 by Infineon Technologies is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, built-in diode, and 800 ns turn off time. It operates at a max temperature of 150°C, has a collector-emitter voltage of 1200V, and can handle a max current of 460A. Ideal for high-power applications requiring fast switching capabilities.
FD16001200R17HP4B2BOSA2 by Infineon Technologies

FD16001200R17HP4B2BOSA2

Infineon Technologies

Infineon's FD16001200R17HP4B2BOSA2 IGBT features N-CHANNEL polarity, COMPLEX configuration, and 1700V max. collector-emitter voltage. Ideal for POWER CONTROL applications with 1710ns turn-off time and 650ns turn-on time. Package style is FLANGE MOUNT with 9 terminals in RECTANGULAR shape.
IRGP50B60PD1PBF by Infineon Technologies

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Infineon Technologies

IRGP50B60PD1PBF by Infineon is an N-CHANNEL IGBT with a max voltage of 600V and current of 75A. It has a power dissipation of 390W, rise time of 20ns, and fall time of 20ns. Ideal for power control applications due to its fast switching speed and high collector-emitter voltage capability.
HGTD3N60C3S9A by Fairchild Semiconductor

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Fairchild Semiconductor

Fairchild Semiconductor's HGTD3N60C3S9A is an N-CHANNEL IGBT transistor with 600V max collector-emitter voltage and 6A max collector current. It has a turn-off time of 455ns, turn-on time of 15ns, and fall time of 275ns. Ideal for motor control applications due to its high power dissipation capability of 33W in a small outline package style.
CM500HA-34A by Powerex

CM500HA-34A

Powerex

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 500 A; Case Connection: ISOLATED; Terminal Position: UPPER;
HGTG40N60C3 by Fairchild Semiconductor

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Fairchild Semiconductor

HGTG40N60C3 by Fairchild Semiconductor is an N-CHANNEL IGBT transistor with 600V max collector-emitter voltage, 75A max collector current, and 291W max power dissipation. Ideal for motor control applications due to its fast turn-off time of 460ns and high operating temperature of 150°C.
FS150R12KT3 by Eupec & Kg

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N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 200 A; Package Body Material: UNSPECIFIED; Maximum Collector-Emitter Voltage: 1200 V;