Renesas Electronics - RJH60M2DPE-00#J3

RJH60M2DPE-00#J3 by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number RJH60M2DPE-00#J3
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 63 W; Maximum Collector Current (IC): 25 A; Package Shape: RECTANGULAR;
Datasheet RJH60M2DPE-00#J3 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 25 A
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Maximum Gate-Emitter Threshold Voltage: 7 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Nominal Turn Off Time (toff): 170 ns
No. of Terminals: 2
Maximum Power Dissipation (Abs): 63 W
Maximum Collector-Emitter Voltage: 600 V
Terminal Position: SINGLE
Nominal Turn On Time (ton): 45 ns
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 30 V
Case Connection: COLLECTOR
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