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Manufacturer | Renesas Electronics |
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Manufacturer's Part Number | RJH60M2DPE-00#J3 |
Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 63 W; Maximum Collector Current (IC): 25 A; Package Shape: RECTANGULAR; |
Datasheet | RJH60M2DPE-00#J3 Datasheet |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Maximum Collector Current (IC): | 25 A |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Transistor Application: | POWER CONTROL |
Maximum Gate-Emitter Threshold Voltage: | 7 V |
Sub-Category: | Insulated Gate BIP Transistors |
Polarity or Channel Type: | N-CHANNEL |
Surface Mount: | YES |
Nominal Turn Off Time (toff): | 170 ns |
No. of Terminals: | 2 |
Maximum Power Dissipation (Abs): | 63 W |
Maximum Collector-Emitter Voltage: | 600 V |
Terminal Position: | SINGLE |
Nominal Turn On Time (ton): | 45 ns |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PSSO-G2 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Maximum Operating Temperature: | 150 Cel |
Maximum Gate-Emitter Voltage: | 30 V |
Case Connection: | COLLECTOR |