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| Manufacturer | Renesas Electronics |
|---|---|
| Manufacturer's Part Number | RJK0328DPB-01-J0 |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 65 W; No. of Terminals: 4; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; |
| Datasheet | RJK0328DPB-01-J0 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 60 A |
| Maximum Pulsed Drain Current (IDM): | 240 A |
| Sub-Category: | FET General Purpose Power |
| Surface Mount: | YES |
| No. of Terminals: | 4 |
| Maximum Power Dissipation (Abs): | 65 W |
| Terminal Position: | SINGLE |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PSSO-G4 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .0029 ohm |
| Other Names: |
-1161-RJK0328DPB-01#J0CT RJK0328DPB-01#J0TR RJK0328DPB-01#J0CT RJK0328DPB01J0 RJK0328DPB-01#J0DKR |
| Polarity or Channel Type: | N-CHANNEL |
| Minimum DS Breakdown Voltage: | 30 V |
| Maximum Drain Current (Abs) (ID): | 60 A |
