Renesas Electronics - RJK0328DPB-01-J0

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RJK0328DPB-01-J0 by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number RJK0328DPB-01-J0
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 65 W; No. of Terminals: 4; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet RJK0328DPB-01-J0 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 60 A
Maximum Pulsed Drain Current (IDM): 240 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 4
Minimum DS Breakdown Voltage: 30 V
Maximum Power Dissipation (Abs): 65 W
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (Abs) (ID): 60 A
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0029 ohm
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