Renesas Electronics - RJK03B7DPA-00-J5A

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RJK03B7DPA-00-J5A by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number RJK03B7DPA-00-J5A
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 30 W; Maximum Pulsed Drain Current (IDM): 120 A; Maximum Drain Current (Abs) (ID): 30 A;
Datasheet RJK03B7DPA-00-J5A Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 30 A
Maximum Pulsed Drain Current (IDM): 120 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 5
Minimum DS Breakdown Voltage: 30 V
Maximum Power Dissipation (Abs): 30 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-N5
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (Abs) (ID): 30 A
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0107 ohm
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