Renesas Electronics - RJK1056DPB-00-J5

  1. Home
  2. Renesas Electronics - RJK1056DPB-00-J5
RJK1056DPB-00-J5 by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number RJK1056DPB-00-J5
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 65 W; Terminal Finish: NICKEL PALLADIUM GOLD; Package Body Material: PLASTIC/EPOXY;
Datasheet RJK1056DPB-00-J5 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 25 A
Maximum Pulsed Drain Current (IDM): 100 A
Sub-Category: FET General Purpose Powers
Surface Mount: YES
Terminal Finish: NICKEL PALLADIUM GOLD
No. of Terminals: 5
Maximum Power Dissipation (Abs): 65 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-X5
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .014 ohm
Avalanche Energy Rating (EAS): 6.3 mJ
Maximum Feedback Capacitance (Crss): 120 pF
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e4
Minimum DS Breakdown Voltage: 100 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 25 A
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

AUIRF7341QTR by Infineon Technologies

AUIRF7341QTR

Infineon Technologies

AUIRF7341QTR by Infineon is a N-CHANNEL FET with 55V DS breakdown voltage, ideal for SWITCHING applications. Features include 42A max pulsed drain current, 140mJ avalanche energy rating, and 0.05 ohm max drain-source resistance. Suitable for high-power switching in various electronic devices.
IRF530PBF by Vishay Intertechnology

IRF530PBF

Vishay Intertechnology

Vishay Intertechnology's IRF530PBF is a N-CHANNEL FET with 100V DS Breakdown Voltage and 56A IDM. Ideal for SWITCHING applications, it has a max power dissipation of 88W and operates in ENHANCEMENT MODE at temperatures ranging from -55 to 175°C.
IRLML6244TRPBF by International Rectifier

IRLML6244TRPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Maximum Drain Current (ID): 6.3 A; Package Shape: RECTANGULAR;
FQD12N20LTM by Onsemi

FQD12N20LTM

Onsemi

FQD12N20LTM by Onsemi is a N-CHANNEL Power FET with 200V DS Breakdown Voltage and 36A IDM. Ideal for SWITCHING applications, it features a built-in diode, 0.32 ohm RDS(on), and operates in ENHANCEMENT MODE. Suitable for surface mount with GULL WING terminals, it has a max power dissipation of 55W and can withstand temperatures from -55 to 150°C.
G3R450MT17J by Genesic Semiconductor

G3R450MT17J

Genesic Semiconductor

G3R450MT17J by Genesic Semiconductor is a N-CHANNEL Power FET with 1700V DS Breakdown Voltage. Ideal for SWITCHING applications, it features a max IDM of 12A and EAS of 59mJ. With SILICON CARBIDE material, it operates b/w -55 to 175 °C and has 0.63 ohm Drain-Source Resistance.
IRFH5010TRPBF by Infineon Technologies

IRFH5010TRPBF

Infineon Technologies

The Infineon Technologies IRFH5010TRPBF is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 0.009 ohm RDS(on). Ideal for SWITCHING applications, it features a 400A IDM and 227mJ EAS. This SINGLE transistor in PLASTIC/EPOXY package operates in ENHANCEMENT MODE at up to 150°C.
BS170 by Telcom Semiconductor

BS170

Telcom Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .83 W; JESD-609 Code: e0; Maximum Drain Current (ID): .5 A;
PSMN4R8-100BSE by NXP Semiconductors

PSMN4R8-100BSE

NXP Semiconductors

PSMN4R8-100BSE by NXP is an N-channel Power FET with 100V DS breakdown voltage and 120A max drain current. Ideal for switching applications, it features a built-in diode, 0.0048 ohm RDS(on), and 707A pulsed drain current.
SI4946BEY-T1-GE3 by Vishay Intertechnology

SI4946BEY-T1-GE3

Vishay Intertechnology

Vishay Intertechnology's SI4946BEY-T1-GE3 is an N-channel power FET with a min DS breakdown voltage of 60V. It has a max pulsed drain current of 30A and an avalanche energy rating of 7.2mJ. This transistor is suitable for applications requiring high power dissipation and fast switching times.
NVTFS5116PLTAG by Onsemi

NVTFS5116PLTAG

Onsemi

NVTFS5116PLTAG by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, 126A IDM, and 0.072ohm RDS(on). Ideal for power management applications in small outline packages. Operating at up to 175°C, it features a built-in diode and avalanche energy rating of 45mJ.
FDT434P by Onsemi

FDT434P

Onsemi

FDT434P by Onsemi is a P-CHANNEL Power FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features 6A Drain Current, 0.05 ohm On Resistance, and operates in ENHANCEMENT MODE. With a max power dissipation of 3W and operating temperature up to 150°C, it's suitable for various electronic designs.
AO4490L by Alpha & Omega Semiconductor

AO4490L

Alpha & Omega Semiconductor

AO4490L by Alpha & Omega Semiconductor is a N-CHANNEL FET with 30V DS Breakdown Voltage and 120A IDM. Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE. Operating in ENHANCEMENT MODE, it has a max power dissipation of 2.8W and can handle up to 16A drain current.
RFD16N05LSM9A by Harris Semiconductor

RFD16N05LSM9A

Harris Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 16 A; Terminal Position: SINGLE; Package Style (Meter): SMALL OUTLINE;
IRFR024NTRPBF by Infineon Technologies

IRFR024NTRPBF

Infineon Technologies

IRFR024NTRPBF by Infineon is a N-CHANNEL FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. It features 68A IDM, 71mJ EAS, and 0.075ohm RDS(ON). With a max power dissipation of 45W and operating temperature of 175°C, it's suitable for high-power electronic systems.
IRF640 by Vishay Siliconix

IRF640

Vishay Siliconix

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Minimum DS Breakdown Voltage: 200 V; JESD-30 Code: R-PSFM-T3; Package Body Material: PLASTIC/EPOXY;
IRF530NSTRLPBF by International Rectifier

IRF530NSTRLPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: SINGLE; JESD-609 Code: e3; Maximum Pulsed Drain Current (IDM): 60 A;
BSC011N03LSIATMA1 by Infineon Technologies

BSC011N03LSIATMA1

Infineon Technologies

Infineon's BSC011N03LSIATMA1 is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 400A IDM, 0.0015 ohm RDS(on), and 100mJ EAS rating. Its small outline package and DUAL terminal position make it suitable for various power management systems.
SIS862DN-T1-GE3 by Vishay Intertechnology

SIS862DN-T1-GE3

Vishay Intertechnology

Vishay Intertechnology's SIS862DN-T1-GE3 is a N-channel Power FET with 60V DS breakdown voltage, 40A max drain current, and 0.0085 ohm max on resistance. Ideal for switching applications, it features a single configuration with built-in diode in a small outline package suitable for surface mount technology.
IRF640PBF by International Rectifier

IRF640PBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Drain Current (ID): 18 A; Terminal Form: THROUGH-HOLE;
PMV20ENR by NXP Semiconductors

PMV20ENR

NXP Semiconductors

PMV20ENR by NXP Semiconductors is an N-CHANNEL FET with a max drain current of 7.6A and power dissipation of 6.94W in enhancement mode. Ideal for applications requiring high-power handling, it operates at temperatures up to 150°C and features surface mount configuration for easy installation.