Renesas Electronics - RJK6015DPK

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RJK6015DPK by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number RJK6015DPK
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain Current (ID): 21 A; Maximum Drain-Source On Resistance: .36 ohm; No. of Elements: 1;
Datasheet RJK6015DPK Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 21 A
Maximum Pulsed Drain Current (IDM): 63 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
No. of Terminals: 3
Minimum DS Breakdown Voltage: 600 V
Qualification: Not Qualified
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .36 ohm
Moisture Sensitivity Level (MSL): 1
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