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Manufacturer | Renesas Electronics |
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Manufacturer's Part Number | RJK6024DPD-00-J2 |
Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: 42 ohm; Operating Mode: ENHANCEMENT MODE; Terminal Form: GULL WING; |
Datasheet | RJK6024DPD-00-J2 Datasheet |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Drain Current (ID): | .4 A |
Maximum Pulsed Drain Current (IDM): | .6 A |
Polarity or Channel Type: | N-CHANNEL |
Surface Mount: | YES |
No. of Terminals: | 2 |
Minimum DS Breakdown Voltage: | 600 V |
Qualification: | Not Qualified |
Terminal Position: | SINGLE |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PSSO-G2 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Operating Mode: | ENHANCEMENT MODE |
Case Connection: | DRAIN |
Maximum Drain-Source On Resistance: | 42 ohm |