Renesas Electronics - RJP30H2DPK-M0#T0

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RJP30H2DPK-M0#T0 by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number RJP30H2DPK-M0#T0
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 35 A; Transistor Application: POWER CONTROL;
Datasheet RJP30H2DPK-M0#T0 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 35 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Maximum Gate-Emitter Threshold Voltage: 5 V
Surface Mount: NO
Nominal Turn Off Time (toff): 240 ns
No. of Terminals: 3
Maximum Power Dissipation (Abs): 60 W
Terminal Position: SINGLE
Nominal Turn On Time (ton): 120 ns
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Maximum Operating Temperature: 150 Cel
Case Connection: COLLECTOR
Polarity or Channel Type: N-CHANNEL
Maximum Collector-Emitter Voltage: 360 V
Maximum Gate-Emitter Voltage: 30 V
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum VCEsat: 1.9 V
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