Renesas Electronics - RJP4010AGE-01#P5

  1. Home
  2. Renesas Electronics - RJP4010AGE-01#P5
RJP4010AGE-01#P5 by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number RJP4010AGE-01#P5
Description N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Maximum Operating Temperature: 150 Cel; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Gate-Emitter Voltage: 6 V;
Datasheet RJP4010AGE-01#P5 Datasheet
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 1.6 W
Maximum Collector-Emitter Voltage: 400 V
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Maximum Gate-Emitter Threshold Voltage: 1.2 V
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 6 V
Sub-Category: Insulated Gate BIP Transistors
Peak Reflow Temperature (C): NOT SPECIFIED
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

FF300R12KS4HOSA1 by Infineon Technologies

FF300R12KS4HOSA1

Infineon Technologies

FF300R12KS4HOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a max voltage of 1200V, max current of 370A, and turn off time of 590ns. Ideal for applications requiring high power switching like industrial motor drives and renewable energy systems.
NGTB15N120IHRWG by Onsemi

NGTB15N120IHRWG

Onsemi

Insulated Gate Bipolar Transistors; Terminal Finish: Matte Tin (Sn) - annealed; JESD-609 Code: e3;
APT35GT120JU2 by Advanced Power Technology

APT35GT120JU2

Advanced Power Technology

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 55 A; Additional Features: LOW CONDUCTION LOSS; Case Connection: ISOLATED;
SKM200GB12T4 by Semikron International

SKM200GB12T4

Semikron International

SKM200GB12T4 by Semikron is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a Max VCEsat of 2.05V and can handle a Max Collector Current of 310A. Ideal for POWER CONTROL applications due to its fast Nominal Turn Off Time of 507ns and high Max Collector-Emitter Voltage of 1200V.
AFGHL50T65SQD by Onsemi

AFGHL50T65SQD

Onsemi

AFGHL50T65SQD by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 2.1V and a max collector current (IC) of 80A. It is commonly used for power control applications due to its high power dissipation of 268W and max operating temperature of 175°C.
IRG4BC30KDPBF by Infineon Technologies

IRG4BC30KDPBF

Infineon Technologies

IRG4BC30KDPBF by Infineon is an N-CHANNEL IGBT transistor with 600V max collector-emitter voltage and 28A max collector current. It has a 120ns fall time, 370ns turn off time, and can handle up to 100W power dissipation. Ideal for motor control applications due to its single configuration and flange mount package style.
FF300R12MS4BOSA1 by Infineon Technologies

FF300R12MS4BOSA1

Infineon Technologies

FF300R12MS4BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, a max voltage of 1200V, and a current rating of 370A. It has a turn-off time of 590ns and a turn-on time of 180ns, making it suitable for high-power applications like industrial motor drives and renewable energy systems.
IKW75N60TXK by Infineon Technologies

IKW75N60TXK

Infineon Technologies

IKW75N60TXK by Infineon Technologies is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 80A max collector current. It has a single configuration with built-in diode, ideal for power control applications. The transistor offers fast switching with 69ns turn-on time and 401ns turn-off time at a max operating temperature of 150°C.
FGH40T120SMD by Fairchild Semiconductor

FGH40T120SMD

Fairchild Semiconductor

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 555 W; Maximum Collector Current (IC): 80 A; Terminal Finish: MATTE TIN; Maximum Gate-Emitter Threshold Voltage: 7.5 V;
NGTB40N120FL2WG by Onsemi

NGTB40N120FL2WG

Onsemi

NGTB40N120FL2WG by Onsemi is an N-CHANNEL IGBT with 1200V VCE, 80A IC, and 535W Pd. It operates up to 175°C making it ideal for high-power applications like industrial motor drives and renewable energy systems.
IRGB4056DPBF by Infineon Technologies

IRGB4056DPBF

Infineon Technologies

IRGB4056DPBF by Infineon Technologies is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 600V and Max Collector Current of 24A. It has a Power Dissipation of 140W, making it suitable for POWER CONTROL applications requiring fast switching times (tr: 24ns, tf: 31ns) and high efficiency in a RECTANGULAR package.
IXA60IF1200NA by IXYS Corporation

IXA60IF1200NA

IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 290 W; Maximum Collector Current (IC): 88 A; Nominal Turn On Time (ton): 110 ns;
FP30R06W1E3B11BOMA1 by Infineon Technologies

FP30R06W1E3B11BOMA1

Infineon Technologies

Infineon Technologies' FP30R06W1E3B11BOMA1 is an N-CHANNEL IGBT with 7 elements, 600V max collector-emitter voltage, and 37A max collector current. It has a complex configuration for power control applications, featuring a rectangular package style with flange mount and UL approval. Nominal turn off time is 245ns while turn on time is 42ns.
IKW25N120H3 by Infineon Technologies

IKW25N120H3

Infineon Technologies

IKW25N120H3 by Infineon Technologies is a N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and max collector current of 50A. It is used for power control applications, offering a nominal turn-off time of 397ns and max power dissipation of 326W.
IKW50N60DTPXKSA1 by Infineon Technologies

IKW50N60DTPXKSA1

Infineon Technologies

IKW50N60DTPXKSA1 by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 80A max collector current. Ideal for power control applications, it features a single configuration with built-in diode and a nominal turn-off time of 332ns. The transistor operates in temperatures as low as -40°C, making it suitable for various industrial uses.
FF300R12KE3HOSA1 by Infineon Technologies

FF300R12KE3HOSA1

Infineon Technologies

FF300R12KE3HOSA1 by Infineon Technologies is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a max voltage of 1200V, current of 440A, and turn-off time of 830ns. Ideal for POWER CONTROL applications due to its SILICON material and operating temperature up to 150°C.
IXXH30N60B3D1 by Littelfuse

IXXH30N60B3D1

Littelfuse

IXXH30N60B3D1 by Littelfuse is an N-CHANNEL IGBT with 600V VCE, 60A IC, and 1.85V VCEsat. Ideal for POWER CONTROL applications, it features a PLASTIC/EPOXY package, RECTANGULAR shape, and 292ns turn-off time.
FF225R12ME4BOSA1 by Infineon Technologies

FF225R12ME4BOSA1

Infineon Technologies

FF225R12ME4BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, a built-in diode, and thermistor. It has a max voltage of 1200V, current of 320A, and turn-off time of 600ns. Ideal for applications requiring high power efficiency in industrial systems.
IKY75N120CH3XKSA1 by Infineon Technologies

IKY75N120CH3XKSA1

Infineon Technologies

IKY75N120CH3XKSA1 by Infineon is an N-CHANNEL IGBT with 1200V max collector-emitter voltage and 150A max collector current. Ideal for power control applications, it has a single configuration with built-in diode and offers fast turn-off time of 468ns.
CM900DU-24NF by Powerex

CM900DU-24NF

Powerex

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 900 A; Maximum Collector-Emitter Voltage: 1200 V; Transistor Element Material: SILICON;