Renesas Electronics - RJP63K2DPK-M0#T0

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RJP63K2DPK-M0#T0 by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number RJP63K2DPK-M0#T0
Description N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 35 A; Maximum Gate-Emitter Voltage: 30 V; Maximum Gate-Emitter Threshold Voltage: 5 V;
Datasheet RJP63K2DPK-M0#T0 Datasheet
NAME DESCRIPTION
Maximum Collector Current (IC): 35 A
Maximum Power Dissipation (Abs): 60 W
Maximum Collector-Emitter Voltage: 630 V
Maximum Gate-Emitter Threshold Voltage: 5 V
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 30 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
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