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| Manufacturer | Renesas Electronics |
|---|---|
| Manufacturer's Part Number | RJQ6015DPM-00#T0 |
| Description | Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 37 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Operating Temperature: 150 Cel; |
| Datasheet | RJQ6015DPM-00#T0 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Maximum Collector Current (IC): | 37 A |
| Maximum Power Dissipation (Abs): | 50 W |
| Maximum Collector-Emitter Voltage: | 600 V |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| No. of Elements: | 1 |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Gate-Emitter Voltage: | 30 V |
| Sub-Category: | Insulated Gate BIP Transistors |
| Peak Reflow Temperature (C): | NOT SPECIFIED |
| Maximum VCEsat: | 2.2 V |









