Renesas Electronics - RKV651KL#R1

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Terminal Finish: TIN; Nominal Diode Capacitance: 18.22 pF; Maximum Repetitive Peak Reverse Voltage: 35 V; JESD-609 Code: e3;

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Nominal Diode Capacitance: 64 pF; Maximum Repetitive Peak Reverse Voltage: 33 V; Minimum Quality Factor: 200;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

STMicroelectronics' BBY34D is a Varactor Diode with HYPERABRUPT classification, offering a Min Quality Factor of 400 and Min Breakdown Voltage of 22V. Ideal for microwave applications, this SINGLE-config diode has a Variable Capacitance Ratio of 2.7, operating up to 175 °C.

SMV1231-040LF by Skyworks: Varactor Diode, Hyperabrupt, S Band. Ideal for RF applications due to its high capacitance ratio and low breakdown voltage. Surface mount chip carrier package with silicon diode element material.

1N4806 by Onsemi is a Varactor Diode with 18pF capacitance, 99V breakdown voltage, and 0.5W power dissipation. It is used in RF applications for frequency tuning due to its abrupt variable capacitance classification. Operating temperature ranges from -65 °C to 150°C.

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Nominal Diode Capacitance: .8 pF; Maximum Repetitive Peak Reverse Voltage: 6 V; Minimum Quality Factor: 10;

The Onsemi MV104 is a Varactor Diode with 2 elements, common cathode config, and abrupt variable capacitance classification. It has a min quality factor of 100, nominal capacitance of 39.5 pF, and breakdown voltage of 32 V. Ideal for RF applications due to its high-quality factor and precise capacitance control in communication systems.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SMV1265-040LF by Skyworks Solutions is a single hyperabrupt varactor diode with 13.8pF capacitance, suitable for ultra high frequency applications. It has a reverse test voltage of 26V, operates b/w -55 to 125°C, and dissipates up to 0.25W power in a chip carrier package.

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Minimum Quality Factor: 200; Nominal Diode Capacitance: 64 pF; Maximum Repetitive Peak Reverse Voltage: 33 V;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

VARIABLE CAPACITANCE DIODE; Terminal Position: BOTTOM; Terminal Form: THROUGH-HOLE; No. of Terminals: 3; Surface Mount: NO; Package Shape: ROUND;

MMBV2101LT1 by Onsemi is a varactor diode with a min quality factor of 450, suitable for high frequency to ultra high frequency applications. It has a nominal capacitance of 6.8 pF and a max power dissipation of 0.225 W, making it ideal for RF circuit designs requiring precise tuning capabilities. The diode's abrupt variable capacitance classification and dual terminal position offer flexibility in various small outline package styles for surface mount applications.

VARIABLE CAPACITANCE DIODE;

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;