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| Manufacturer | Renesas Electronics |
|---|---|
| Manufacturer's Part Number | RQA0011DNSTB-E |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 15 W; Transistor Element Material: SILICON; Operating Mode: ENHANCEMENT MODE; |
| Datasheet | RQA0011DNSTB-E Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Feedback Capacitance (Crss): | 4.5 pF |
| Maximum Drain Current (ID): | 3.8 A |
| Sub-Category: | FET General Purpose Power |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |
| No. of Terminals: | 3 |
| Minimum DS Breakdown Voltage: | 16 V |
| Maximum Power Dissipation (Abs): | 15 W |
| Terminal Position: | BOTTOM |
| Package Style (Meter): | CHIP CARRIER |
| JESD-30 Code: | R-PBCC-N3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | NO LEAD |
| Operating Mode: | ENHANCEMENT MODE |
| Highest Frequency Band: | ULTRA HIGH FREQUENCY BAND |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Drain Current (Abs) (ID): | 3.8 A |
| Case Connection: | SOURCE |
