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| Manufacturer | Renesas Electronics |
|---|---|
| Manufacturer's Part Number | RQJ0306FQDQA#H6 |
| Description | P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .8 W; No. of Elements: 1; Maximum Drain Current (Abs) (ID): 3 A; |
| Datasheet | RQJ0306FQDQA#H6 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Maximum Power Dissipation (Abs): | .8 W |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | SINGLE |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| No. of Elements: | 1 |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Drain Current (ID): | 3 A |
| Maximum Drain Current (Abs) (ID): | 3 A |
| Sub-Category: | Other Transistors |
| Peak Reflow Temperature (C): | NOT SPECIFIED |
| Polarity or Channel Type: | P-CHANNEL |
| Surface Mount: | YES |
