Renesas Electronics - RQM2201DNS#H1

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RQM2201DNS#H1 by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number RQM2201DNS#H1
Description N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Drain Current (ID): 2 A;
Datasheet RQM2201DNS#H1 Datasheet
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 1.5 W
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): 2 A
Maximum Drain Current (Abs) (ID): 2 A
Sub-Category: FET General Purpose Power
Peak Reflow Temperature (C): NOT SPECIFIED
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
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