Renesas Electronics - SV56C

MV2109 by Onsemi is a varactor diode with a min quality factor of 200, ideal for high frequency to ultra high frequency applications. It features a nominal capacitance of 33 pF and a max power dissipation of 0.28 W, making it suitable for RF tuning circuits in communication systems. The diode has a breakdown voltage of 30 V and is classified as an abrupt variable capacitance diode with through-hole terminal form.

1N5472 by Onsemi is a varactor diode with 47pF capacitance, 30V breakdown voltage, and 0.00000002uA reverse current. It is used in RF applications for frequency tuning due to its abrupt variable capacitance classification. With a temperature range of -65 to 175 °C, it offers high quality factor and low power dissipation.

VARIABLE CAPACITANCE DIODE; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3; Terminal Finish: TIN;

The Onsemi SVC354R is a varactor diode with a min quality factor of 200, breakdown voltage of 16V, and capacitance ratio of 17.5. It is used in applications requiring variable capacitance diodes for RF tuning circuits due to its small outline package and gull wing terminals.

VARIABLE CAPACITANCE DIODE; Terminal Position: BOTTOM; Terminal Form: THROUGH-HOLE; No. of Terminals: 3; Surface Mount: NO; Package Shape: ROUND;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

MV2109RL1 by Onsemi is a single varactor diode with a min quality factor of 200 and nominal capacitance of 33 pF. It operates at a max temperature of 150 °C, making it suitable for applications requiring variable capacitance in RF circuits. With a breakdown voltage of 30V and power dissipation of 0.28W, this through-hole diode is ideal for high-frequency tuning in electronic devices.

TIV308 by Texas Instruments is a Varactor Diode with 11 pF capacitance, 20 V breakdown voltage, and 200 min quality factor. It is ideal for applications requiring variable capacitance diodes in isolated axial configurations with a max power dissipation of 0.25 W.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE;

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Terminal Finish: TIN; Nominal Diode Capacitance: 18.22 pF; Maximum Repetitive Peak Reverse Voltage: 35 V; JESD-609 Code: e3;

1N4813 by Onsemi is a Varactor Diode with a Min Quality Factor of 15, Max Reverse Current of 0.005 uA, and Nominal Diode Capacitance of 68 pF. It is used in applications requiring variable capacitance diodes for tuning circuits in communication systems.

1N5439 by Onsemi is a Varactor Diode with a Min Quality Factor of 450, Nominal Capacitance of 3.3 pF, and Max Reverse Current of 0.00000002 uA. It is used in RF tuning circuits for applications requiring variable capacitance diodes.

The Toshiba 1SV228(TPH3,F) Varactor Diode features a common cathode configuration with 2 elements, suitable for very high frequency applications. With a max operating temperature of 125°C, it offers a nominal capacitance of 30.5 pF and a min breakdown voltage of 15V, making it ideal for small outline surface mount designs.

Toshiba 1SV280,H3F Varactor Diode is a single-configured diode with abrupt variable capacitance, suitable for ultra high frequency applications. With a max reverse current of 0.003 uA and nominal capacitance of 4.25 pF, it operates at temperatures up to 125 °C. This surface-mount diode has a min breakdown voltage of 15 V and is ideal for small outline package styles.

The Onsemi MV2105 is a varactor diode with a min quality factor of 400, ideal for high frequency to ultra high frequency applications. With a nominal capacitance of 15 pF and a breakdown voltage of 30 V, this single-config diode is designed for high-performance RF circuits in cylindrical package style.

BB909B-TAPE-REEL by NXP Semiconductors is a variable capacitance diode designed for very high frequency applications. It features a max reverse current of 0.01 µA, a breakdown voltage of 32 V, and operates up to 100 °C. Ideal for tuning circuits and RF applications, its isolated axial terminals ensure reliable performance.

SMV1265-040LF by Skyworks Solutions is a single hyperabrupt varactor diode with 13.8pF capacitance, suitable for ultra high frequency applications. It has a reverse test voltage of 26V, operates b/w -55 to 125°C, and dissipates up to 0.25W power in a chip carrier package.

MV2101RLRE by Onsemi is a varactor diode with a min quality factor of 450, nominal capacitance of 6.8 pF, and a breakdown voltage of 30 V. It is ideal for applications requiring variable capacitance in electronic circuits due to its high-quality performance and temperature range up to 150 °C.