Renesas Electronics - UPA1523BH

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UPA1523BH by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number UPA1523BH
Description P-CHANNEL; Configuration: 2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 28 W; Maximum Drain-Source On Resistance: 1.3 ohm; Maximum Pulsed Drain Current (IDM): 8 A;
Datasheet UPA1523BH Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: 2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 2 A
Maximum Pulsed Drain Current (IDM): 8 A
Sub-Category: Other Transistors
Surface Mount: NO
Terminal Finish: TIN LEAD
No. of Terminals: 10
Maximum Power Dissipation (Abs): 28 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T10
No. of Elements: 4
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: ISOLATED
Maximum Drain-Source On Resistance: 1.3 ohm
Avalanche Energy Rating (EAS): .4 mJ
Polarity or Channel Type: P-CHANNEL
JESD-609 Code: e0
Minimum DS Breakdown Voltage: 60 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 2 A
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