UPA1552AH by Renesas Electronics | Transistors

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Manufacturer	Renesas Electronics
Manufacturer's Part Number	UPA1552AH
Description	N-CHANNEL; Configuration: 2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Pulsed Drain Current (IDM): 20 A; Package Shape: RECTANGULAR; Minimum DS Breakdown Voltage: 60 V;
Datasheet	UPA1552AH Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	5 A
Maximum Pulsed Drain Current (IDM):	20 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO
No. of Terminals:	10
Minimum DS Breakdown Voltage:	60 V
Qualification:	Not Qualified
Terminal Position:	SINGLE
Package Style (Meter):	IN-LINE
JESD-30 Code:	R-PSIP-T10
No. of Elements:	4
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Maximum Drain-Source On Resistance:	.24 ohm
Moisture Sensitivity Level (MSL):	1

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