Renesas Electronics - UPA1763G-E1-AT

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UPA1763G-E1-AT by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number UPA1763G-E1-AT
Description N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Drain Current (ID): 4.5 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (Abs) (ID): 4.5 A;
Datasheet UPA1763G-E1-AT Datasheet
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 2 W
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): 4.5 A
Maximum Drain Current (Abs) (ID): 4.5 A
Sub-Category: FET General Purpose Power
Peak Reflow Temperature (C): 260
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: MATTE TIN
JESD-609 Code: e3
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