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Manufacturer | Renesas Electronics |
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Manufacturer's Part Number | UPA1870BGR-9JG-E1-AT |
Description | N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Terminal Finish: MATTE TIN; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 6 A; |
Datasheet | UPA1870BGR-9JG-E1-AT Datasheet |
NAME | DESCRIPTION |
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Maximum Power Dissipation (Abs): | 2 W |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Maximum Operating Temperature: | 150 Cel |
Maximum Drain Current (ID): | 6 A |
Maximum Drain Current (Abs) (ID): | 6 A |
Sub-Category: | FET General Purpose Power |
Peak Reflow Temperature (C): | 260 |
Polarity or Channel Type: | N-CHANNEL |
Surface Mount: | YES |
Terminal Finish: | MATTE TIN |
JESD-609 Code: | e3 |