Renesas Electronics - UPA2452TL-A

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UPA2452TL-A by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number UPA2452TL-A
Description N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Package Shape: RECTANGULAR; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet UPA2452TL-A Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 10
Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 7.8 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
No. of Terminals: 6
Maximum Power Dissipation (Abs): 2.5 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .03 ohm
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 24 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 7.8 A
Peak Reflow Temperature (C): 260
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