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| Manufacturer | Renesas Electronics |
|---|---|
| Manufacturer's Part Number | UPA2660T1R-E2-AX |
| Description | N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.3 W; Maximum Operating Temperature: 150 Cel; Terminal Finish: NICKEL PALLADIUM GOLD; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; |
| Datasheet | UPA2660T1R-E2-AX Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Drain Current (ID): | 4 A |
| Sub-Category: | FET General Purpose Power |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |
| Terminal Finish: | NICKEL PALLADIUM GOLD |
| JESD-609 Code: | e4 |
| Minimum DS Breakdown Voltage: | 20 V |
| Maximum Power Dissipation (Abs): | 2.3 W |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Drain Current (Abs) (ID): | 4 A |
| Peak Reflow Temperature (C): | 260 |
| Maximum Drain-Source On Resistance: | .062 ohm |








