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Manufacturer | Renesas Electronics |
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Manufacturer's Part Number | UPA2660T1R-E2-AX |
Description | N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.3 W; Maximum Operating Temperature: 150 Cel; Terminal Finish: NICKEL PALLADIUM GOLD; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; |
Datasheet | UPA2660T1R-E2-AX Datasheet |
NAME | DESCRIPTION |
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Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Maximum Drain Current (ID): | 4 A |
Sub-Category: | FET General Purpose Power |
Polarity or Channel Type: | N-CHANNEL |
Surface Mount: | YES |
Terminal Finish: | NICKEL PALLADIUM GOLD |
JESD-609 Code: | e4 |
Minimum DS Breakdown Voltage: | 20 V |
Maximum Power Dissipation (Abs): | 2.3 W |
Maximum Operating Temperature: | 150 Cel |
Maximum Drain Current (Abs) (ID): | 4 A |
Peak Reflow Temperature (C): | 260 |
Maximum Drain-Source On Resistance: | .062 ohm |